Single photon emission and detection at the nanoscale utilizing semiconductor nanowires

We report recent progress toward on-chip single photon emission and detection in the near infrared utilizing semiconductor nanowires. Our single photon emitter is based on a single InAsP quantum dot embedded in a p-n junction defined along the growth axis of an InP nanowire. Under forward bias, light is emitted from the single quantum dot by...

Single photon emission and detection at the nanoscale utilizing semiconductor nanowires

Surround-gated vertical nanowire quantum dots

We report voltage dependent photoluminescence experiments on single indium arsenide phosphide (InAsP) quantum dots embedded in vertical surround-gated indium phosphide (InP) nanowires. We show that by tuning the gate voltage, we can access different quantum dot charge states. We study the anisotropic exchange splitting by polarization analysis,...

Nanopositioning of a diamond nanocrystal containing a single nitrogen-vacancy defect center

Precise control over the position of a single quantum object is important for many experiments in quantum science and nanotechnology. We report on a technique for high-accuracy positioning of individual diamond nanocrystals. The positioning is done with a home-built nanomanipulator under real-time scanning electron imaging, yielding an accuracy...

Sharp emission from single InAs quantum dots grown on vicinal GaAs surfaces

We report on optical studies of single InAs quantum dots grown on vicinal GaAs(001) surfaces. To ensure low quantum dot density and appropriate size, we deposit InAs layers 1.4 or 1.5 ML thick, thinner than the critical thickness for Stranski–Krastanov quantum dot formation. These dots show sharp and bright photoluminescence. Lifetime...

Photoluminescence enhancement in thin films of PbSe nanocrystals

Remarkable photoluminescence enhancement (PLE) in submonolayer films of PbSe nanocrystals (NCs) upon continuous illumination was observed. The intensity increase from films on InP substrates was highest in vacuum, while for films on Si/SiO2 substrates the PLE was stronger in air. The magnitude of the PLE was found to depend on the excitation...