Solution-processed polycrystalline silicon on paper

Printing electronics has led to application areas which were formerly impossible with conventional electronic processes. Solutions are used as inks on top of large areas at room temperatures, allowing the production of fully flexible circuitry. Commonly, research in these inks have focused on organic and metal-oxide ink materials due to their...

Single-Grain Si TFTs Fabricated on a Precursor from Doctor-Blade Coated Liquid-Si

Printing is attractive for manufacturing flexible circuits. This manuscript presents our investigation of single-grain Si TFTs fabricated from printed liquid-Si, on a polyimide substrate with the maximum process temperature of 350 °C. The field-effect mobility is 460 cm2/Vs for electrons and 121 cm2/Vs for the holes. CMOS inverters were also...

Single-grain Si thin-film transistors for monolithic 3D-ICs and flexible electronics

We review our recent achievements in monolithic 3D-ICs and flexible electronics based on single-grain Si TFTs that are fabricated inside a single-grain with a low-temperature process. Based on pulsed-laser crystallization and submicron sized cavities made in the substrate, amorphous-Si precursor film was converted into poly-Si having grains that...

Single-grain Si thin-film transistors on flexible polyimide substrate fabricated from doctor-blade coated liquid-Si

Solution process of silicon will provide high-speed transistor fabrication with low-cost by, for example, roll-to-roll process. In this paper, a low-temperature process (350?°C) is reported for fabrication of high-quality Si devices on a polyimide substrate from doctor-blade coated liquid-Si. With this method, different semiconductor devices...

Single-Grain Si TFTs Fabricated by Liquid-Si and Long-Pulse Excimer-Laser

Solution process of silicon using liquid-Si is attractive for fabrication of high-speed flexible electronics. We have fabricated single-grain Si TFTs on location-controlled Si grains with longpulse excimer laser crystallization of spin-coated liquid Si film. The maximum grain diameter is 3.5?m, and the mobilities for electrons and holes are...

Single-grain Si TFTs fabricated by liquid-Si and longpulse excimer-laser (abstract)

Gate oxide induced switch-on undershoot current observed in thin-film transistors

The transient drain current of the single-grain silicon thin-film transistor with gate oxide deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition has been measured by applying a square signal on the gate and a constant low voltage between source and drain. Switch-on undershoot current has been observed, which can...