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Lee, M.J. (author), Sun, P. (author), Charbon, E. (author)This paper reports on the first implementation of a single-photon avalanche diode (SPAD) in standard silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. The SPAD is realized in a circular shape, and it is based on a P+/N-well junction along with a P-well guard-ring structure formed by lateral diffusion of two...journal article 2015
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Burri, S. (author), Maruyama, Y. (author), Michalet, X. (author), Regazzoni, F. (author), Bruschini, C. (author), Charbon, E. (author)We present the architecture and three applications of the largest resolution image sensor based on single-photon avalanche diodes (SPADs) published to date. The sensor, fabricated in a high-voltage CMOS process, has a resolution of 512 × 128 pixels and a pitch of 24 ?m. The fill-factor of 5% can be increased to 30% with the use of microlenses....journal article 2014
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Mata Pavia, J. (author), Wolf, M. (author), Charbon, E. (author)Single-photon avalanche diode (SPAD) imagers typically have a relatively low fil factor, i.e. a low proportion of the pixel’s surface is light sensitive, due to in-pixel circuitry. We present a microlens array fabricated on a 128x128 single-photon avalanche diode (SPAD) imager to enhance its sensitivity. The benefit and limitations of these...journal article 2014
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A wide spectral range single-photon avalanche diode fabricated in an advanced 180 nm CMOS technologyMandai, S. (author), Fishburn, M.W. (author), Maruyama, Y. (author), Charbon, E. (author)We present a single-photon avalanche diode (SPAD) with a wide spectral range fabricated in an advanced 180 nm CMOS process. The realized SPAD achieves 20 % photon detection probability (PDP) for wavelengths ranging from 440 nm to 820 nm at an excess bias of 4V, with 30 % PDP at wavelengths from 520 nm to 720 nm. Dark count rates (DCR) are at...journal article 2012