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Ishihara, R. (author), Chen, T. (author), Baiano, A. (author), Mofrad, M.R. (author), Beenakker, C.I.M. (author)We review our recent achievements in location-control of Ge grains and high performance single-grain (SG) Ge thin film transistor (TFT) fabricated inside a Ge grain. Large Ge grains having a grain size of 10 µm were obtained at predetermined positions by the µ-Czochralski process using excimer-laser and sputtered a-Ge layer. TFTs were fabricated...journal article 2011
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Ishihara, R. (author), Baiano, A. (author), Chen, T. (author), Derakhshandeh, J. (author), Tajari Mofrad, M.R. (author), Danesh, M. (author), Saputra, N. (author), Long, J. (author), Beenakker, C.I.M. (author)Single-grain Si TFTs have been fabricated using accurate 2D location control of large Si grain with the ?-Czochralski process. TFTs fabricated inside the crystalline islands of 6 ?m show a mobility (600cm2/Vs) as high as that of the SOI counterpart, despite of the low-temperature (<350oC) process. By applying a tensile stress into the grain, the...journal article 2009
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Baiano, A. (author)SG-TFTs fabricated by the ?-Czochralski process have already reached a performance as high as that of SOI MOSFET devices. However, one of the most important and challenging goals is extending SG-TFT technology to reach a higher level of performance than that achieved with SOI technology. This thesis considers two different aspects of this...doctoral thesis 2009
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Matsuki, N. (author), Ishihara, R. (author), Baiano, A. (author), Beenakker, C.I.M. (author)We used scanning capacitance microscopy (SCM) to investigate the electrical activity of grain boundaries consisting of random and coincidence-site-lattice (CSL) boundaries in location-controlled silicon islands, which were fabricated using the ?-Czochralski process with an excimer laser. The SCM results suggest that the electrical activity of...journal article 2008
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- Saputra, N. (author), Danesh, M. (author), Baiano, A. (author), Ishihara, R. (author), Long, J.R. (author), Karaki, N. (author), Inoue, S. (author) journal article 2008
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Baiano, A. (author), Ishihara, R. (author), Saputra, N. (author), Long, J. (author), Karaki, N. (author), Inoue, S. (author), Metselaar, W. (author), Beenakker, C.I.M. (author)Single Grain Thin-film transistors (SG-TFTs) fabricated inside a location-controlled grain by µ-Czochralski process have as high as SOI performance. To model them, BSIMSOI with a proper modification of the mobility is proposed. The model has been verified for n- and p-channel DC and low frequency AC conditions by comparison with measurement...journal article 2007