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Shi, L. (author), Sarubbi, F. (author), Nanver, L.K. (author), Kroth, U. (author), Gottwald, A. (author), Nihtianov, S. (author)In recent work, a novel silicon-based photodiode technology was reported to be suitable for producing radiation detectors for 193 nm deep-ultraviolet light and for the extreme-ultraviolet (EUV) spectral range. The devices were developed and fabricated at the Delft Institute of Microsystems and Nanoelectronics (DIMES), TU Delft. In this paper, we...journal article 2010
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Sarubbi, F. (author)Doping technologies for formation of ultrashallow and highly-doped p+ junctions are continuously demanded to face the challenges in front-end processing that have emerged due to the aggressive downscaling of vertical dimensions for future semiconductor devices. As an alternative to implantations, current solutions are based on in-situ boron (B)...doctoral thesis 2010
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Sarubbi, F. (author), Scholtes, T.L.M. (author), Nanver, L.K. (author)Nanometer-thick amorphous boron (?-B) layers were formed on (100) Si during exposure to diborane (B2H6) in a chemical vapor deposition (CVD) system, either at atmospheric or reduced pressures, at temperatures down to 500°C. The dependence of the growth mechanism on processing parameters was investigated by analytical techniques, such as...journal article 2009
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Nanver, L.K. (author), Schellevis, H. (author), Scholtes, T.L.M. (author), La Spina, L. (author), Lorito, G. (author), Sarubbi, F. (author), Gonda, V. (author), Popadic, M. (author), Buisman, K. (author), De Vreede, L.C.N. (author)This paper reviews special RF/microwave silicon device implementations in a process that allows two-sided contacting of the devices: the back-wafer contacted silicon-on-glass (SOG) substrate-transfer technology (STT) developed at DIMES. In this technology, metal transmission lines can be placed on the low-loss glass substrate, while the...journal article 2009
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Popadic, M. (author), Scholtes, T.L.M. (author), De Boer, W. (author), Sarubbi, F. (author), Nanver, L.K. (author)An empirical model of As surface segregation during reduced-pressure chemical vapor deposition Si epitaxy is presented. This segregation mechanism determines the resulting doping profile in the grown layer and is here described by a model of simultaneous and independent As adsorption and segregation versus incorporation. The model quantifies...journal article 2009
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- Huang, C. (author), Buisman, K. (author), Nanver, L.K. (author), Sarubbi, F. (author), Popadic, M. (author), Scholtes, T.L.M. (author), Schellevis, H. (author), Larson, L.E. (author), De Vreede, L.C.N. (author) journal article 2008
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Sarubbi, F. (author), Nanver, L.K. (author), Scholtes, T.L.M. (author)A new doping technique is presented that uses a pure boron atmospheric/low-pressure chemical vapor deposition (AP/LPCVD) in a commercially available epitaxial reactor to form less than 2-nm-thick ?-doped boron-silicide (BxSi) layers on the silicon surface. For long exposure B segregates at the surface to form a very slow growing amorphous layer...journal article 2006
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Popadic, M. (author), Sarubbi, F. (author), Scholtes, T.L.M. (author), Nanver, L.K. (author)With the purpose of controlling the incorporation of arsenic during RPCVD Si epitaxy, the surface segregation of As during lowtemperature epi growth was investigated. Parameters such as the Si growth rate, As deposition rate and As incorporation rate, which in previous models were either not evaluated or assumed to be constant, were found here...journal article 2006
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- Sarubbi, F. (author), Nanver, L.K. (author), Scholtes, T.L. (author) journal article 2006