The design of a 16*16 pixels CMOS image sensor with 0.5 e- RMS noise

Low noise image sensors can see images by just a few photons have a wide application in both the scientific and economic fields. This thesis presents a design of a 16*16 pixels CMOS image sensor with a target noise level in the order of 0.5 electrons RMS in 0.18?m technology, which has a potential to catch a large amount of low light imaging...

The design of a global shutter CMOS image sensor in 110nm technology

The goal of this work described in this thesis is to design a CMOS image sensor chip, implementing pixels with a 4.8?m pitch with a peripheral readout circuitry in a 110nm CMOS process. The architecture of the CMOS image sensor is presented, with a functional illustration for every block. The 8T global shutter pixel noise, circuit and layout are...

Low-Power Low-Noise CMOS Imager Design: In Micro-Digital Sun Sensor Application

A digital sun sensor is superior to an analog sun sensor in aspects of resolution, albedo immunity, and integration. The proposed Micro-Digital Sun Sensor (µDSS) is an autonomous digital sun sensor which is implemented by means of a CMOS image sensor, which is named APS+. The µDSS is designed specifically for micro-satellite application which...

Low-Noise CMOS Image Sensors for Radio-Molecular Imaging

This thesis presents the development of low-noise CMOS image sensors for radio-molecular imaging. The development is described in two directions: firstly, from the technology point of view to reduce the pixel noise level, and secondly from the design point of view to reduce the pixel readout circuits noise level. With respect to the SNR and...

A Double-mode Linear Imaging System for IC-compatible Microspectrometers in Visible Light

In this thesis, a double-mode linear imaging system is designed for the application of microspectrometers. The imaging system is optimized so as to work with a Planar Double Grating System and a Linear Variable Optical Filter, the combinations of which would be suitable candidates of high-resolution low-cost microspectrometers. This linear...

Charge Domain Interlacing CMOS Image Sensor Design

This thesis presents a CMOS image sensor which can implement the charge domain interlacing principle. Inspired by the shared amplifier pixel structure and based on a pinned photodiode four transistor (4T) structure, two innovative pixel designs combined with two different readout directions are presented. These novel pixels are designed to fit...