Searched for: department%3A%22Quantum%255C%252BNanoscience%22
(1 - 9 of 9)
document
Agundez, R.R. (author), Verduijn, J. (author), Rogge, S. (author), Blaauboer, M. (author)
We investigate the Fano-Kondo interplay in an Aharonov-Bohm ring with an embedded noninteracting quantum dot and a Coulomb interacting quantum dot. Using a slave-boson mean-field approximation we diagonalize the Hamiltonian via scattering matrix theory and derive the conductance in the form of a Fano expression, which depends on the mean-field...
journal article 2013
document
Tettamanzi, G.C. (author), Verduijn, J. (author), Lansbergen, G.P. (author), Blaauboer, M. (author), Calderón, M.J. (author), Aguado, R. (author), Rogge, S. (author)
Semiconductor devices have been scaled to the point that transport can be dominated by only a single dopant atom. As a result, in a Si fin-type field effect transistor Kondo physics can govern transport when one electron is bound to the single dopant. Orbital (valley) degrees of freedom, apart from the standard spin, strongly modify the Kondo...
journal article 2012
document
Mol, J.A. (author), Van der Heijden, J. (author), Verduijn, J. (author), Klein, M. (author), Remacle, F. (author), Rogge, S. (author)
Ternary logic has the lowest cost of complexity, here, we demonstrate a CMOS hardware implementation of a ternary adder using a silicon metal-on-insulator single electron transistor. Gate dependent rectifying behavior of a single electron transistor (SET) results in a robust three-valued output as a function of the potential of the single...
journal article 2011
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Lansbergen, G.P. (author), Rahman, R. (author), Verduijn, J. (author), Tettamanzi, G.C. (author), Collaert, N. (author), Biesemans, S. (author), Klimeck, G. (author), Hollenberg, L.C.L. (author), Rogge, S. (author)
We report the observation of lifetime-enhanced transport (LET) based on perpendicular valleys in silicon by transport spectroscopy measurements of a two-electron system in a silicon transistor. The LET is manifested as a peculiar current step in the stability diagram due to a forbidden transition between an excited state and any of the lower...
journal article 2011
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Rahman, R. (author), Lansbergen, G.P. (author), Verduijn, J. (author), Tettamanzi, G.C. (author), Park, S.H. (author), Collaert, N. (author), Biesemans, S. (author), Klimeck, G. (author), Hollenberg, L.C.L. (author), Rogge, S. (author)
We present atomistic simulations of the D0 to D? charging energies of a gated donor in silicon as a function of applied fields and donor depths and find good agreement with experimental measurements. A self-consistent field large-scale tight-binding method is used to compute the D? binding energies with a domain of over 1.4 million atoms, taking...
journal article 2011
document
Rahman, R. (author), Verduijn, J. (author), Kharche, N. (author), Lansbergen, G.P. (author), Klimeck, G. (author), Hollenberg, L.C.L. (author), Rogge, S. (author)
An important challenge in silicon quantum electronics in the few electron regime is the potentially small energy gap between the ground and excited orbital states in 3D quantum confined nanostructures due to the multiple valley degeneracies of the conduction band present in silicon. Understanding the “valley-orbit” (VO) gap is essential for...
journal article 2011
document
Johnson, B.C. (author), Tettamanzi, G.C. (author), Yang, C. (author), Alves, A.D.C. (author), Van Donkelaar, J. (author), Thompson, S. (author), Verduijn, J. (author), Mol, J.A. (author), Wacquez, R. (author), Vinet, M. (author), Dzurak, A.S. (author), Sanquer, M. (author), Rogge, S. (author), Jamieson, D.N. (author)
Deterministic doping is crucial for overcoming dopant number variability in present nano-scale devices and for exploiting single atom degrees of freedom. The development of determinisitic doping schemes is required. Here, two approaches to the detection of single ion impact events in Si-based devices are reviewed. The first is via specialized...
journal article 2010
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Johnson, B.C. (author), Alves, A. (author), Van Donkelaar, J. (author), Thompson, S. (author), Yang, C. (author), Jamieson, D. (author), Verduijn, A. (author), Mol, J. (author), Tettamanzi, G. (author), Rogge, S. (author), Wacquez, R. (author), Vinet, M. (author), Dzurak, A. (author)
journal article 2010
document
Verduijn, J. (author), Agundez, R.R. (author), Blaauboer, M. (author), Rogge, S. (author)
We report the results of an experiment investigating coherence and correlation effects in a system of coupled donors. Two donors are strongly coupled to two leads in a parallel configuration within a nano-wire field effect transistor. By applying a magnetic field we observe interference between two donor-induced Kondo channels, which depends on...
journal article
Searched for: department%3A%22Quantum%255C%252BNanoscience%22
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