Frequency and amplitude stabilized terahertz quantum cascade laser as local oscillator

We demonstrate an experimental scheme to simultaneously stabilize the frequency and amplitude of a 3.5 THz third-order distributed feedback quantum cascade laser as a local oscillator. The frequency stabilization has been realized using a methanol absorption line, a power detector, and a proportional-integral-derivative (PID) loop. The amplitude...

In situ study of hydrogen silsesquioxane dissolution rate in salty and electrochemical developers

In order to better characterize the development of the electron-beam resist hydrogen silsesquioxane (HSQ), the authors used a quartz crystal microbalance (QCM) to study its rate of dissolution in situ. The authors determined the effect of both salt concentration and applied electric potential on the development rate of HSQ. The development rates...

Terahertz heterodyne spectrometer using a quantum cascade laser

A terahertz (THz) heterodyne spectrometer is demonstrated based on a quantum cascade laser (QCL) as a local oscillator (LO) and an NbN hot electron bolometer as a mixer, and it is used to measure high-resolution molecular spectral lines of methanol (CH3OH) between 2.913–2.918 THz. The spectral lines are taken from a gas cell containing methanol...

Roles of secondary electrons and sputtered atoms in ion-beam-induced deposition

The authors report the results of investigating two models for ion-beam-induced deposition (IBID). These models describe IBID in terms of the impact of secondary electrons and of sputtered atoms, respectively. The yields of deposition, sputtering, and secondary electron emission, as well as the energy spectra of the secondary electrons were...

Sub-10-nm nanolithography with a scanning helium beam

Scanning helium ion beam lithography is presented as a promising pattern definition technique for dense sub-10-nm structures. The powerful performance in terms of high resolution, high sensitivity, and a low proximity effect is demonstrated in a hydrogen silsesquioxane resist.

Influence of hydrogen silsesquioxane resist exposure temperature on ultrahigh resolution electron beam lithography

Performance of hydrogen silsesquioxane (HSQ) resist material with respect to the temperature during electron beam exposure was investigated. Electron beam exposure at elevated temperatures up to 90?°C shows sensitivity rise and slight contrast (?) degradation compared to lower temperature cases. Ultrahigh resolution structures formed at elevated...