Searched for: faculty:"Applied%5C%2BSciences"
(1 - 7 of 7)
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Castellanos-Gomez, A. (author), Poot, M. (author), Steele, G.A. (author), Van der Zant, H.S.J. (author), Agrait, N. (author), Rubio-Bollinger, G. (author)
We fabricate freely suspended nanosheets of molybdenum disulphide (MoS2) which are characterized by quantitative optical microscopy and high-resolution friction force microscopy. We study the elastic deformation of freely suspended nanosheets of MoS2 using an atomic force microscope. The Young’s modulus and the initial pretension of the...
journal article 2012
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Cartamil Bueno, S.J. (author), Steeneken, P.G. (author), Tichelaar, F.D. (author), Navarro Moratalla, E. (author), Venstra, W.J. (author), Leeuwen, R. (author), Coronado, E. (author), Van der Zant, H.S.J. (author), Steele, G.A. (author), Castellanos-Gomez, A. (author)
Controlling the strain in two-dimensional (2D) materials is an interesting avenue to tailor the mechanical properties of nanoelectromechanical systems. Here, we demonstrate a technique to fabricate ultrathin tantalum oxide nanomechanical resonators with large stress by the laser oxidation of nano-drumhead resonators composed of tantalum...
journal article 2015
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Meerwaldt, H.B. (author), Labadze, G. (author), Schneider, B.H. (author), Taspinar, A. (author), Blanter, Y.M. (author), Van der Zant, H.S.J. (author), Steele, G.A. (author)
We have used the mechanical motion of a carbon nanotube (CNT) as a probe of the average charge on a quantum dot. Variations of the resonance frequency and the quality factor are determined by the change in average charge on the quantum dot during a mechanical oscillation. The average charge, in turn, is influenced by the gate voltage, the bias...
journal article 2012
document
Castellanos Gomez, A. (author), Meerwaldt, H.B. (author), Ventra, W.J. (author), Van der Zant, H.S.J. (author), Steele, G.A. (author)
The nonlinear interaction between two mechanical resonances of the same freely suspended carbon nanotube resonator is studied. We find that, in the Coulomb-blockade regime, the nonlinear modal interaction is dominated by single-electron-tunneling processes and that the mode-coupling parameter can be tuned with the gate voltage, allowing both...
journal article 2012
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Nishiguchi, K. (author), Castellanos-Gomez, A. (author), Yamaguchi, H. (author), Fujiwara, A. (author), Van der Zant, H.S.J. (author), Steele, G.A. (author)
We demonstrate a tunnel diode composed of a vertical MoS2/SiO2/Si heterostructure. A MoS2 flake consisting four areas of different thicknesses functions as a gate terminal of a silicon field-effect transistor. A thin gate oxide allows tunneling current to flow between the n-type MoS2 layers and p-type Si channel. The tunneling-current...
journal article 2015
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Meerwaldt, H.B. (author), Johnston, S.R. (author), Van der Zant, H.S.J. (author), Steele, G.A. (author)
We report fast readout of the motion of a carbon nanotube mechanical resonator. A close-proximity high electron mobility transistor amplifier is used to increase the bandwidth of the measurement of nanotube displacements from the kHz to the MHz regime. Using an electrical detection scheme with the nanotube acting as a mixer, we detect the...
journal article 2013
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Nishiguchi, K. (author), Yamaguchi, H. (author), Fujiwara, A. (author), Van der Zant, H.S.J. (author), Steele, G.A. (author)
We demonstrate high-speed charge detection at room temperature with single-electron resolution by using a radio-frequency field-effect transistor (RF-FET). The RF-FET combines a nanometer-scale silicon FET with an impedance-matching circuit composed of an inductor and capacitor. Driving the RF-FET with a carrier signal at its resonance frequency...
journal article 2013
Searched for: faculty:"Applied%5C%2BSciences"
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