Revealing trap depth distributions in persistent phosphors

Persistent luminescence or afterglow is caused by a gradual release of charge carriers from trapping centers. The energy needed to release these charge carriers is determined by the trap depths. Knowledge of these trap depths is therefore crucial in the understanding of the persistent luminescence mechanism. Unfortunately, the trap depths in...

Persistent luminescence in MSi2O2N2:Eu phosphors

In this work we study the persistent luminescence properties of europium-doped alkaline earth silicon oxynitrides (CaSi2O2N2, SrSi2O2N2 and BaSi2O2N2). All compounds show afterglow emission, with an emission spectrum which is similar to the steady state photoluminescence. The afterglow decay time for BaSi2O2N2:Eu and SrSi2O2N2:Eu is about 50 and...