Searched for: faculty:"Applied%5C%2BSciences"
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Agundez Mojarro, R.R. (author), Salfi, J. (author), Rogge, S. (author), Blaauboer, M. (author)
We study the effect of disorder in strongly interacting small atomic chains. Using the Kotliar-Ruckenstein slave-boson approach, we diagonalize the Hamiltonian via scattering matrix theory. We numerically solve the Kondo transmission and the slave-boson parameters that allow us to calculate the Kondo temperature. We demonstrate that in the weak...
journal article 2015
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Miwa, J.A. (author), Mol, J.A. (author), Salfi, J. (author), Rogge, S. (author), Simmons, M.Y. (author)
Single phosphorus donors in silicon are promising candidates as qubits in the solid state. Here, we present low temperature scanning probe microscopy and spectroscopy measurements of individual phosphorus dopants deliberately placed in p-type silicon ?1?nm below the surface. The ability to image individual dopants combined with scanning...
journal article 2013
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Zwanenburg, F.A. (author), Dzurak, A.S. (author), Morello, A. (author), Simmons, M.Y. (author), Hollenberg, L.C.L. (author), Klimeck, G. (author), Rogge, S. (author), Coppersmith, S.N. (author), Eriksson, M.A. (author)
This review describes recent groundbreaking results in Si, Si/SiGe, and dopant-based quantum dots, and it highlights the remarkable advances in Si-based quantum physics that have occurred in the past few years. This progress has been possible thanks to materials development of Si quantum devices, and the physical understanding of quantum effects...
journal article 2013
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Mol, J.A. (author), Salfi, J. (author), Miwa, J.A. (author), Simmons, M.Y. (author), Rogge, S. (author)
Understanding the electronic properties of dopants near an interface is a critical challenge for nanoscale devices. We have determined the effect of dielectric mismatch and quantum confinement on the ionization energy of individual acceptors beneath a hydrogen passivated silicon (100) surface. While dielectric mismatch between the vacuum and the...
journal article 2013
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Agundez, R.R. (author), Verduijn, J. (author), Rogge, S. (author), Blaauboer, M. (author)
We investigate the Fano-Kondo interplay in an Aharonov-Bohm ring with an embedded noninteracting quantum dot and a Coulomb interacting quantum dot. Using a slave-boson mean-field approximation we diagonalize the Hamiltonian via scattering matrix theory and derive the conductance in the form of a Fano expression, which depends on the mean-field...
journal article 2013
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Tettamanzi, G.C. (author), Verduijn, J. (author), Lansbergen, G.P. (author), Blaauboer, M. (author), Calderón, M.J. (author), Aguado, R. (author), Rogge, S. (author)
Semiconductor devices have been scaled to the point that transport can be dominated by only a single dopant atom. As a result, in a Si fin-type field effect transistor Kondo physics can govern transport when one electron is bound to the single dopant. Orbital (valley) degrees of freedom, apart from the standard spin, strongly modify the Kondo...
journal article 2012
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Mol, J.A. (author), Van der Heijden, J. (author), Verduijn, J. (author), Klein, M. (author), Remacle, F. (author), Rogge, S. (author)
Ternary logic has the lowest cost of complexity, here, we demonstrate a CMOS hardware implementation of a ternary adder using a silicon metal-on-insulator single electron transistor. Gate dependent rectifying behavior of a single electron transistor (SET) results in a robust three-valued output as a function of the potential of the single...
journal article 2011
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Paul, A. (author), Tettamanzi, G.C. (author), Lee, S. (author), Mehrotra, S.R. (author), Collaert, N. (author), Biesemans, S. (author), Rogge, S. (author), Klimeck, G. (author)
Channel conductance measurements can be used as a tool to study thermally activated electron transport in the sub-threshold region of state-of-art FinFETs. Together with theoretical tight-binding (TB) calculations, this technique can be used to understand the dependence of the source-to-channel barrier height (Eb) and the active channel area ...
journal article 2011
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Rahman, R. (author), Lansbergen, G.P. (author), Verduijn, J. (author), Tettamanzi, G.C. (author), Park, S.H. (author), Collaert, N. (author), Biesemans, S. (author), Klimeck, G. (author), Hollenberg, L.C.L. (author), Rogge, S. (author)
We present atomistic simulations of the D0 to D? charging energies of a gated donor in silicon as a function of applied fields and donor depths and find good agreement with experimental measurements. A self-consistent field large-scale tight-binding method is used to compute the D? binding energies with a domain of over 1.4 million atoms, taking...
journal article 2011
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Lansbergen, G.P. (author), Rahman, R. (author), Verduijn, J. (author), Tettamanzi, G.C. (author), Collaert, N. (author), Biesemans, S. (author), Klimeck, G. (author), Hollenberg, L.C.L. (author), Rogge, S. (author)
We report the observation of lifetime-enhanced transport (LET) based on perpendicular valleys in silicon by transport spectroscopy measurements of a two-electron system in a silicon transistor. The LET is manifested as a peculiar current step in the stability diagram due to a forbidden transition between an excited state and any of the lower...
journal article 2011
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Rahman, R. (author), Verduijn, J. (author), Kharche, N. (author), Lansbergen, G.P. (author), Klimeck, G. (author), Hollenberg, L.C.L. (author), Rogge, S. (author)
An important challenge in silicon quantum electronics in the few electron regime is the potentially small energy gap between the ground and excited orbital states in 3D quantum confined nanostructures due to the multiple valley degeneracies of the conduction band present in silicon. Understanding the “valley-orbit” (VO) gap is essential for...
journal article 2011
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Johnson, B.C. (author), Tettamanzi, G.C. (author), Yang, C. (author), Alves, A.D.C. (author), Van Donkelaar, J. (author), Thompson, S. (author), Verduijn, J. (author), Mol, J.A. (author), Wacquez, R. (author), Vinet, M. (author), Dzurak, A.S. (author), Sanquer, M. (author), Rogge, S. (author), Jamieson, D.N. (author)
Deterministic doping is crucial for overcoming dopant number variability in present nano-scale devices and for exploiting single atom degrees of freedom. The development of determinisitic doping schemes is required. Here, two approaches to the detection of single ion impact events in Si-based devices are reviewed. The first is via specialized...
journal article 2010
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Johnson, B.C. (author), Alves, A. (author), Van Donkelaar, J. (author), Thompson, S. (author), Yang, C. (author), Jamieson, D. (author), Verduijn, A. (author), Mol, J. (author), Tettamanzi, G. (author), Rogge, S. (author), Wacquez, R. (author), Vinet, M. (author), Dzurak, A. (author)
journal article 2010
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Calderón, M.J. (author), Verduijn, J. (author), Lansbergen, G.P. (author), Tettamanzi, G.C. (author), Rogge, S. (author), Koiller, B. (author)
Donor states in Si nanodevices can be strongly modified by nearby insulating barriers and metallic gates. Experimental results indicate a strong reduction in the charging energy of isolated As dopants in Si nonplanar field effect transistors relative to the bulk value. By studying the problem of two electrons bound to a shallow donor within the...
journal article 2010
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Johnson, B.C. (author), Tettamanzi, G.C. (author), Alves, A.D.C. (author), Thompson, S. (author), Yang, C. (author), Verduijn, J. (author), Mol, J.A. (author), Wacquez, R. (author), Vinet, M. (author), Sanquer, M. (author), Rogge, S. (author), Jamieson, D.N. (author)
We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic doping is crucial for overcoming dopant number variability in present nanoscale devices and for exploiting single...
journal article 2010
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Nguyen, H.M. (author), Dundar, M.A. (author), Van der Heijden, R.W. (author), Van der Drift, E.W.J.M. (author), Salemink, H.W.M. (author), Rogge, S. (author), Caro, J. (author)
We demonstrate a compact silicon photonic crystal Mach-Zehnder interferometer operating in the self-collimation regime. By tailoring the photonic band structure such as to produce self-collimated beams, it is possible to design beam splitters and mirrors and combine these to a 20 × 20 ?m2 format. With transmission spectroscopy we find a...
journal article 2010
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Nguyen, H.M. (author), Van der Drift, E.W.J.M. (author), Caro, J. (author), Rogge, S. (author), Salemink, H.W.M. (author)
conference paper 2010
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Verduijn, J. (author), Tettamanzi, G.C. (author), Lansbergen, G.P. (author), Collaert, N. (author), Biesemans, S. (author), Rogge, S. (author)
In this letter, we describe the observation of the interference of conduction paths induced by two donors in a nanoscale silicon transistor, resulting in a Fano resonance. This demonstrates the coherent exchange of electrons between two donors. In addition, the phase difference between the two conduction paths can be tuned by means of a magnetic...
journal article 2010
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Klein, M. (author), Mol, J.A. (author), Verduijn, J. (author), Lansbergen, G.P. (author), Rogge, S. (author), Levine, R.D. (author), Remacle, F. (author)
We provide an experimental proof of principle for a ternary multiplier realized in terms of the charge state of a single dopant atom embedded in a fin field effect transistor (Fin-FET). Robust reading of the logic output is made possible by using two channels to measure the current flowing through the device and the transconductance. A read out...
journal article 2010
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Rahman, R. (author), Lansbergen, G.P. (author), Park, S.H. (author), Verduijn, J. (author), Klimeck, G. (author), Rogge, S. (author), Hollenberg, L.C.L. (author)
Adiabatic shuttling of single impurity bound electrons to gate-induced surface states in semiconductors has attracted much attention in recent times, mostly in the context of solid-state quantum computer architecture. A recent transport spectroscopy experiment for the first time was able to probe the Stark shifted spectrum of a single donor in...
journal article 2009
Searched for: faculty:"Applied%5C%2BSciences"
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