Searched for: faculty:"Applied%5C%2BSciences"
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Laird, E.A. (author), Kuemmeth, F. (author), Steele, G.A. (author), Grove-Rasmussen, K. (author), Nygard, J. (author), Flensberg, K. (author), Kouwenhoven, L.P. (author)
Carbon nanotubes are a versatile material in which many aspects of condensed matter physics come together. Recent discoveries have uncovered new phenomena that completely change our understanding of transport in these devices, especially the role of the spin and valley degrees of freedom. This review describes the modern understanding of...
journal article 2015
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Qu, F. (author), Beukman, A.J.A. (author), Nadj-Perge, S. (author), Wimmer, M.T. (author), Nguyen, B.M. (author), Yi, W. (author), Thorp, J. (author), Sokolich, M. (author), Kiselev, A.A. (author), Manfra, M.J. (author), Marcus, C.M. (author), Kouwenhoven, L.P. (author)
Among the theoretically predicted two-dimensional topological insulators, InAs/GaSb double quantum wells (DQWs) have a unique double-layered structure with electron and hole gases separated in two layers, which enables tuning of the band alignment via electric and magnetic fields. However, the rich trivial-topological phase diagram has yet to be...
journal article 2015
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Van Weperen, I. (author), Tarasinski, B. (author), Eeltink, D. (author), Pribiag, V.S. (author), Plissard, S.R. (author), Bakkers, E.P.A.M. (author), Kouwenhoven, L.P. (author), Wimmer, M.T. (author)
We use magnetoconductance measurements in dual-gated InSb nanowire devices, together with a theoretical analysis of weak antilocalization, to accurately extract spin-orbit strength. In particular, we show that magnetoconductance in our three-dimensional wires is very different compared to wires in two-dimensional electron gases. We obtain a...
journal article 2015
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Yi, W. (author), Kiselev, A.A. (author), Thorp, J. (author), Noah, R. (author), Nguyen, B.M. (author), Bui, S. (author), Rajavel, R.D. (author), Hussain, T. (author), Gyure, M.F. (author), Kratz, P. (author), Qian, Q. (author), Manfra, M.J. (author), Pribiag, V.S. (author), Kouwenhoven, L.P. (author), Marcus, C.M. (author), Sokolich, M. (author)
Gate-tunable high-mobility InSb/In1?xAlxSb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200?000?cm2/V?s is measured at T?=?1.8?K. In asymmetrically remote-doped samples with an HfO2 gate dielectric formed by atomic layer deposition, parallel conduction is...
journal article 2015
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Frolov, S.M. (author), Plissard, S.R. (author), Nadj-Perge, S. (author), Kouwenhoven, L.P. (author), Bakkers, E.P.A.M. (author)
A quantum computer will have computational power beyond that of conventional computers, which can be exploited for solving important and complex problems, such as predicting the conformations of large biological molecules. Materials play a major role in this emerging technology, as they can enable sophisticated operations, such as control over...
journal article 2013
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Frolov, S.M. (author), Danon, J. (author), Nadj-Perge, S. (author), Zuo, K. (author), Van Tilburg, J.W.W. (author), Pribiag, V.S. (author), Van den Berg, J.W.G. (author), Bakkers, E.P.A.M. (author), Kouwenhoven, L.P. (author)
We use electric dipole spin resonance to measure dynamic nuclear polarization in InAs nanowire quantum dots. The resonance shifts in frequency when the system transitions between metastable high and low current states, indicating the presence of nuclear polarization. We propose that the low and the high current states correspond to different...
journal article 2012
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Nadj-perge, S. (author), Pribiag, V.S. (author), Van den Berg, J.W.G. (author), Zuo, K. (author), Plissard, S.R. (author), Bakkers, E.P.A.M. (author), Frolov, S.M. (author), Kouwenhoven, L.P. (author)
A double quantum dot in the few-electron regime is achieved using local gating in an InSb nanowire. The spectrum of two-electron eigenstates is investigated using electric dipole spin resonance. Singlet-triplet level repulsion caused by spin-orbit interaction is observed. The size and the anisotropy of singlet-triplet repulsion are used to...
journal article 2012
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Bulgarini, G. (author), Reimer, M.E. (author), Zehender, T. (author), Hocevar, M. (author), Bakkers, E.P.A.M. (author), Kouwenhoven, L.P. (author), Zwiller, V. (author)
Nanowire waveguides with controlled shape are promising for engineering the collection efficiency of quantum light sources. We investigate the exciton lifetime in individual InAsP quantum dots, perfectly positioned on-axis of InP nanowire waveguides. We demonstrate control over the quantum dot spontaneous emission by varying the nanowire...
journal article 2012
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Van Kouwen, M.P. (author), Van Weert, M.H.M. (author), Reimer, M.E. (author), Akopian, N. (author), Perinetti, U. (author), Algra, R.E. (author), Bakkers, E.P.A.M. (author), Kouwenhoven, L.P. (author), Zwiller, V. (author)
We report InP nanowire photodetectors with a single InAsP quantum dot as light absorbing element. With excitation above the InP band gap, the nanowire photodetectors are efficient (quantum efficiency of 4%). Under resonant excitation of the quantum dot, the photocurrent amplitude depends on the linear polarization direction of the incident light...
journal article 2010
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Van Weert, M.H.M. (author), Den Heijer, M. (author), Van Kouwen, M.P. (author), Algra, R.E. (author), Bakkers, E.P.A.M. (author), Kouwenhoven, L.P. (author), Zwiller, V. (author)
We report voltage dependent photoluminescence experiments on single indium arsenide phosphide (InAsP) quantum dots embedded in vertical surround-gated indium phosphide (InP) nanowires. We show that by tuning the gate voltage, we can access different quantum dot charge states. We study the anisotropic exchange splitting by polarization analysis,...
journal article 2010
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Nadj-Perge, S. (author), Frolov, S.M. (author), Van Tilburg, J.W.W. (author), Danon, J. (author), Nazarov, Y.V. (author), Algra, R. (author), Bakkers, E.P.A.M. (author), Kouwenhoven, L.P. (author)
We have achieved the few-electron regime in InAs nanowire double quantum dots. Spin blockade is observed for the first two half-filled orbitals, where the transport cycle is interrupted by forbidden transitions between triplet and singlet states. Partial lifting of spin blockade is explained by spin-orbit and hyperfine mechanisms that enable...
journal article 2010
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Recher, P. (author), Nazarov, Y.V. (author), Kouwenhoven, L.P. (author)
We consider an optical quantum dot where an electron level and a hole level are coupled to respective superconducting leads. We find that electrons and holes recombine producing photons at discrete energies as well as a continuous tail. Further, the spectral lines directly probe the induced superconducting correlations on the dot. At energies...
journal article 2010
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Van Tilburg, J.W.W. (author), Algra, R.E. (author), Immink, W.G.G. (author), Verheijen, M. (author), Bakkers, E.P.A.M. (author), Kouwenhoven, L.P. (author)
We report the growth and characterization of InAs nanowires capped with a 0.5–1 nm epitaxial InP shell. The low-temperature field-effect mobility is increased by a factor 2–5 compared to bare InAs nanowires. We extract the highest low-temperature peak electron mobilities obtained for nanowires to this date, exceeding 20 000 cm2 V s?1. The...
journal article 2010
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Akopian, N. (author), Van Weert, M. (author), Van Kouwen, M. (author), Algra, R. (author), Liu, L. (author), Patriarche, G. (author), Harmand, J.C. (author), Bakkers, E. (author), Kouwenhoven, L. (author), Zwiller, V. (author)
In this paper we present our recent developments in control and manipulation of individual spins and photons in a single nanowire quantum dot. Specific examples include demonstration of optical excitation of single spin states, charge tunable quantum devices and single photon sources. We will also discuss our recent discovery of a new type of...
conference paper 2010
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Scheffler, M. (author), Nadj-Perge, S. (author), Kouwenhoven, L.P. (author), Borgström, M.T. (author), Bakkers, E.P.A.M. (author)
Electrical conductance through InAs nanowires is relevant for electronic applications as well as for fundamental quantum experiments. Here, we employ nominally undoped, slightly tapered InAs nanowires to study the diameter dependence of their conductance. By contacting multiple sections of each wire, we can study the diameter dependence within...
journal article 2009
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Zwanenburg, F.A. (author), Van Loon, A.A. (author), Steele, G.A. (author), Rijmenam, C.E.W.M. (author), Balder, T. (author), Fang, Y. (author), Lieber, C.M. (author), Kouwenhoven, L.P. (author)
We report the realization of extremely small single quantum dots in p-type silicon nanowires, defined by Schottky tunnel barriers with Ni and NiSi contacts. Despite their ultrasmall size the NiSi–Si–NiSi nanowire quantum dots readily allow spectroscopy of at least ten consecutive holes, and additionally they display a pronounced excited-state...
journal article 2009
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Maksym, P.A. (author), Nishi, Y. (author), Austing, D.G. (author), Hatano, T. (author), Kouwenhoven, L.P. (author), Aoki, H. (author), Tarucha, S. (author)
An accurate model of a vertical pillar quantum dot is described. The full three-dimensional structure of the device containing the dot is taken into account and this leads to an effective two-dimensional model in which electrons move in the two lateral dimensions, the confinement is parabolic, and the interaction potential is very different from...
journal article 2009
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Meunier, T. (author), Vink, I.T. (author), Willems van Beveren, L.H. (author), Tielrooij, K.J. (author), Hanson, R. (author), Koppens, F.H.L. (author), Tranitz, H.P. (author), Wegscheider, W. (author), Kouwenhoven, L.P. (author), Vandersypen, L.M.K. (author)
journal article 2007
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Koppens, F.H.L. (author), Klauser, D. (author), Coish, W.A. (author), Nowack, K.C. (author), Kouwenhoven, L.P. (author), Loss, D. (author), Vandersypen, L.M.K. (author)
journal article 2007
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Hanson, R. (author), Kouwenhoven, L.P. (author), Petta, J.R. (author), Tarucha, S. (author), Vandersypen, L.M.K. (author)
journal article 2007
Searched for: faculty:"Applied%5C%2BSciences"
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