Quasiparticle relaxation in high Q superconducting resonators

We present measurements of the quasiparticle relaxation time in Ta superconducting films shaped as planar resonators using the response of the complex conductivity to photon flux. These films have been implanted with magnetic (Mn) as well as non-magnetic atoms (Al). We find a significant decrease of the relaxation time with increasing impurity...

Noise in NbTiN, Al, and Ta Superconducting Resonators on Silicon and Sapphire Substrates

We present measurements of the frequency noise and resonance frequency temperature dependence in planar superconducting resonators on both silicon and sapphire substrates. We show, by covering the resonators with sputtered SiOx layers of different thicknesses, that the temperature dependence of the resonance frequency scales linearly with...

Enhancement of quasiparticle recombination in Ta and Al superconductors by implantation of magnetic and nonmagnetic atoms

The quasiparticle recombination time in superconducting films, consisting of the standard electron-phonon interaction and a yet to be identified low-temperature process, is studied for different densities of magnetic and nonmagnetic atoms. For both Ta and Al, implanted with Mn, Ta, and Al, we observe an increase in the recombination rate. We...

Quasiparticle Relaxation in Optically Excited High-Q Superconducting Resonators

The quasiparticle relaxation time in superconducting films has been measured as a function of temperature using the response of the complex conductivity to photon flux. For tantalum and aluminum, chosen for their difference in electron-phonon coupling strength, we find that at high temperatures the relaxation time increases with decreasing...

Contribution of dielectrics to frequency and noise of NbTiN superconducting resonators

We study NbTiN resonators by measurements of the temperature dependent resonance frequency and frequency noise. Additionally, resonators are studied covered with SiOx dielectric layers of various thicknesses. The resonance frequency develops a nonmonotonic temperature dependence with increasing SiOx layer thickness. The increase in the noise is...