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- Klapwijk, T.M. (author) doctoral thesis 1977
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Vitkalov, S.A. (author), Zheng, H. (author), Sarachik, M.P. (author), Klapwijk, T.M. (author)Measurements in magnetic fields applied at small angles relative to the electron plane in silicon MOSFETs indicate a factor of two increase of the frequency of Shubnikov-de Haas oscillations at H>H_{sat}. This signals the onset of full spin polarization above H_{sat}, the parallel field above which the resistivity saturates to a constant value.journal article 2000
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Smit, G.D.J. (author), Rogge, S. (author), Klapwijk, T.M. (author)We have measured electrical transport across epitaxial, nanometer-sized metal–semiconductor interfaces by contacting CoSi2 islands grown on Si(111) with the tip of a scanning tunneling microscope. The conductance per unit area was found to increase with decreasing diode area. Indeed, the zero-bias conductance was found to be ? 104 times larger...journal article 2002
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Meijer, E.J. (author), Tanase, C. (author), Blom, P.W.M. (author), Van Veenendaal, E. (author), Huisman, B.H. (author), De Leeuw, D.M. (author), Klapwijk, T.M. (author)The switch-on voltage for disordered organic field-effect transistors is defined as the flatband voltage, and is used as a characterization parameter. The transfer characteristics of the solution processed organic semiconductors pentacene, poly(2,5-thienylene vinylene) and poly(3-hexyl thiophene) are modeled as a function of temperature and gate...journal article 2002
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Smit, G.D.J. (author), Rogge, S. (author), Klapwijk, T.M. (author)A generally applicable model is presented to describe the potential barrier shape in ultrasmall Schottky diodes. It is shown that for diodes smaller than a characteristic length lc (associated with the semiconductor doping level) the conventional description no longer holds. For such small diodes the Schottky barrier thickness decreases with...journal article 2002
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Meijer, E.J. (author), Gelinck, G.H. (author), Van Veenendaal, E. (author), Huisman, B.H. (author), De Leeuw, D.M. (author), Klapwijk, T.M. (author)The scaling behavior of the transfer characteristics of solution-processed disordered organic thin-film transistors with channel length is investigated. This is done for a variety of organic semiconductors in combination with gold injecting electrodes. From the channel-length dependence of the transistor resistance in the conducting ON-state, we...journal article 2003
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De Boer, R.W.I. (author), Klapwijk, T.M. (author), Morpurgo, A.F. (author)We report on the fabrication and electrical characterization of field-effect transistors at the surface of tetracene single crystals. We find that the mobility of these transistors reaches the room-temperature value of 0.4?cm2/V?s. The nonmonotonous temperature dependence of the mobility, its weak gate voltage dependence, as well as the...journal article 2003
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- Boogaard, G.R. (author), Verbruggen, A.H. (author), Belzig, W. (author), Klapwijk, T.M. (author) journal article 2004
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- Smit, G.D.J. (author), Rogge, S. (author), Caro, J. (author), Klapwijk, T.M. (author) journal article 2004
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- Meijer, F.E. (author), Morpurgo, A.F. (author), Klapwijk, T.M. (author), Koga, T. (author), Nitta, J. (author) journal article 2004
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- Jaroszynski, J. (author), Popovic, D. (author), Klapwijk, T.M. (author) journal article 2004
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- Smit, G.D.J. (author), Rogge, S. (author), Caro, J. (author), Klapwijk, T.M. (author) journal article 2004
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- Smit, G.D.J. (author), Rogge, S. (author), Caro, J. (author), Klapwijk, T.M. (author) journal article 2004
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- Caro, J. (author), Vink, I.D. (author), Smit, G.D.J. (author), Rogge, S. (author), Klapwijk, T.M. (author), Loo, R. (author), Caymax, M. (author) journal article 2004
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- Meijer, F.E. (author), Morpurgo, A.F. (author), Klapwijk, T.M. (author), Koga, T. (author), Nitta, J. (author) journal article 2004
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Baselmans, J.J.A. (author), Hajenius, M. (author), Gao, J.R. (author), Klapwijk, T.M. (author), De Korte, P.A.J. (author), Voronov, B. (author), Gol'tsman, G. (author)We demonstrate that the performance of NbN lattice cooled hot electron bolometer mixers depends strongly on the interface quality between the bolometer and the contact structure. We show experimentally that both the receiver noise temperature and the gain bandwidth can be improved by more than a factor of 2 by cleaning the interface and adding...journal article 2004
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Jaroszynski, J. (author), Popovic, D. (author), Klapwijk, T.M. (author)Studies of low-frequency resistance noise show that the glassy freezing of the two-dimensional electron system (2DES) in Si in the vicinity of the metal-insulator transition (MIT) persists in parallel magnetic fields B of up to 9 T. At low B, both the glass transition density ng and nc, the critical density for the MIT, increase with B such that...conference paper 2004
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Baselmans, J. (author), Hajenius, M. (author), Gao, J. (author), De Korte, P. (author), Klapwijk, T. (author), Voronov, B. (author), Gol'tsman, G. (author)NbN hot electron bolometer (HEB) mixers are at this moment the best heterodyne detectors for frequencies above 1 THz. However, the fabrication procedure of these devices is such that the quality of the interface between the NbN superconducting film and the contact structure is not under good control. This results in a contact resistance between...conference paper 2004
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Klapwijk, T.M. (author), Barends, R. (author), Gao, J.R. (author), Hajenius, M. (author), Baselmans, J.J.A. (author)Improved and reproducible heterodyne mixing (noise temperatures of 950 K at 2.5 THz) has been realized with NbN based hot-electron superconducting devices with low contact resistances. A distributed temperature numerical model of the NbN bridge, based on a local electron and a phonon temperature, has been used to understand the physical...conference paper 2004
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De Boer, R.W.I. (author), Iosad, N.N. (author), Stassen, A.F. (author), Klapwijk, T.M. (author), Morpurgo, A.F. (author)We investigate the effect of a small leakage current through the gate insulator on the stability of organic single-crystal field-effect transistors (FETs). We find that, irrespective of the specific organic molecule and dielectric used, leakage current flowing through the gate insulator results in an irreversible degradation of the single...journal article 2005