Searched for: faculty:"Applied%5C%2BSciences"
(1 - 20 of 41)

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Nanda, G. (author), Van Veldhoven, E. (author), Maas, D. (author), Sadeghian, H. (author), Alkemade, P.F.A. (author)
The authors report the direct-write growth of hammerhead atomic force microscope(AFM) probes by He+beam induced deposition of platinum-carbon. In order to grow a thin nanoneedle on top of a conventional AFM probe, the authors move a focused He+beam during exposure to a PtC precursor gas. In the final growth stage, a perpendicular movement of the...
journal article 2015
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Nishiguchi, K. (author), Castellanos-Gomez, A. (author), Yamaguchi, H. (author), Fujiwara, A. (author), Van der Zant, H.S.J. (author), Steele, G.A. (author)
We demonstrate a tunnel diode composed of a vertical MoS2/SiO2/Si heterostructure. A MoS2 flake consisting four areas of different thicknesses functions as a gate terminal of a silicon field-effect transistor. A thin gate oxide allows tunneling current to flow between the n-type MoS2 layers and p-type Si channel. The tunneling-current...
journal article 2015
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Bruno, A. (author), De Lange, G. (author), Asaad, S. (author), Van der Enden, K.L. (author), Langford, N.K. (author), DiCarlo, L. (author)
We present microwave-frequency NbTiN resonators on silicon, systematically achieving internal quality factors above 1?M in the quantum regime. We use two techniques to reduce losses associated with two-level systems: an additional substrate surface treatment prior to NbTiN deposition to optimize the metal-substrate interface and deep reactive...
journal article 2015
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Liu, Y. (author), Salemink, H.W.M. (author)
A highly sensitive sensor design based on two-dimensional photonic crystal cavity is demonstrated. The geometric structure of the cavity is modified to gain a high quality factor, which enables a sensitive refractive index sensing. A group of slots with optimized parameters is created in the cavity. The existence of the slots enhances the light...
journal article 2015
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Nishiguchi, K. (author), Yamaguchi, H. (author), Fujiwara, A. (author), Van der Zant, H.S.J. (author), Steele, G.A. (author)
We demonstrate high-speed charge detection at room temperature with single-electron resolution by using a radio-frequency field-effect transistor (RF-FET). The RF-FET combines a nanometer-scale silicon FET with an impedance-matching circuit composed of an inductor and capacitor. Driving the RF-FET with a carrier signal at its resonance frequency...
journal article 2013
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Ten Kate, O.M. (author), De Jong, M. (author), Hintzen, H.T. (author), Van der Kolk, E. (author)
Solar cells of which the efficiency is not limited by the Shockley-Queisser limit can be obtained by integrating a luminescent spectral conversion layer into the cell structure. We have calculated the maximum efficiency of state-of-the-art c-Si, pc-Si, a-Si, CdTe, GaAs, CIS, CIGS, CGS, GaSb, and Ge solar cells with and without an integrated...
journal article 2013
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Miwa, J.A. (author), Mol, J.A. (author), Salfi, J. (author), Rogge, S. (author), Simmons, M.Y. (author)
Single phosphorus donors in silicon are promising candidates as qubits in the solid state. Here, we present low temperature scanning probe microscopy and spectroscopy measurements of individual phosphorus dopants deliberately placed in p-type silicon ?1?nm below the surface. The ability to image individual dopants combined with scanning...
journal article 2013
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Mueller, F. (author), Schouten, R.N. (author), Brauns, M. (author), Gang, T. (author), Lim, W.H. (author), Lai, N.S. (author), Dzurak, A.S. (author), Van der Wiel, W.G. (author), Zwanenburg, F.A. (author)
We report the characterisation of printed circuit boards (PCB) metal powder filters and their influence on the effective electron temperature which is as low as 22 mK for a quantum dot in a silicon MOSFET structure in a dilution refrigerator. We investigate the attenuation behaviour (10 MHz–20 GHz) of filter made of four metal powders with a...
journal article 2013
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Verduijn, J. (author)
doctoral thesis 2012
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Ramakrishnan, G. (author)
Terahertz light is electromagnetic radiation, similar to visible light. The photons that the terahertz light is comprised of carry a much smaller amount of energy compared to the visible light photons. Unlike visible light, terahertz light can pass through materials like plastic, cardboards, wood etc.; a very useful property which enables it to...
doctoral thesis 2012
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Sharma, K. (author), Ponomarev, M.V. (author), Verheijen, M.A. (author), Kunz, O. (author), Tichelaar, F.D. (author), Van de Sanden, M.C.M. (author), Creatore, M. (author)
In this paper, we report on the deposition of amorphous silicon (a-Si:H) films at ultra-high growth rate (11–60?nm/s) by means of the expanding thermal plasma technique, followed by solid-phase crystallization (SPC). Large-grain (?1.5??m) polycrystalline silicon was obtained after SPC of high growth rate (?25?nm/s) deposited a-Si:H films. The...
journal article 2012
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Munao, D. (author)
The area of nanotechnology is one of the most active fields in science today. It is often seen as the area that could lead to substantial progress in terms of finding new materials with new properties. In this respect, silicon nano-particles are found to be greatly attractive because of their significant technological implications. Considering...
doctoral thesis 2012
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Hoang Nguyen, M. (author)
doctoral thesis 2012
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Mol, J.A. (author), Van der Heijden, J. (author), Verduijn, J. (author), Klein, M. (author), Remacle, F. (author), Rogge, S. (author)
Ternary logic has the lowest cost of complexity, here, we demonstrate a CMOS hardware implementation of a ternary adder using a silicon metal-on-insulator single electron transistor. Gate dependent rectifying behavior of a single electron transistor (SET) results in a robust three-valued output as a function of the potential of the single...
journal article 2011
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Paul, A. (author), Tettamanzi, G.C. (author), Lee, S. (author), Mehrotra, S.R. (author), Collaert, N. (author), Biesemans, S. (author), Rogge, S. (author), Klimeck, G. (author)
Channel conductance measurements can be used as a tool to study thermally activated electron transport in the sub-threshold region of state-of-art FinFETs. Together with theoretical tight-binding (TB) calculations, this technique can be used to understand the dependence of the source-to-channel barrier height (Eb) and the active channel area ...
journal article 2011
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Van Erven, J.W.M. (author)
doctoral thesis 2011
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Ashkar, R. (author), Schaich, W.L. (author), De Haan, V.O. (author), Van Well, A.A. (author), Dalgliesh, R. (author), Plomp, J. (author), Pynn, R. (author)
Neutron spin-echo resolved grazing incidence scattering (SERGIS) measurements performed on a silicon diffraction grating with a rectangular profile were shown in our previous publications to be well explained by dynamical theory calculations. The theory is based on a Bloch wave expansion of the neutron wavefunction in the periodic layer of the...
journal article 2011
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Van Oven, J.C. (author), Berwald, F. (author), Berggren, K.K. (author), Kruit, P. (author), Hagen, C.W. (author)
This paper demonstrates electron-beam-induced deposition of few-nm-width dense features on bulk samples by using a scanning electron-beam lithography system. To optimize the resultant features, three steps were taken: (1) features were exposed in a repetitive sequence, so as to build up the deposited features gradually across the entire pattern,...
journal article 2011
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Erdamar, A.K. (author), Van Leest, M.M. (author), Picken, S.J. (author), Caro, J. (author)
We use an elastomer as infill material for a photonic crystal. As a result of the thermal-expansion-induced strongly negative thermal optical coefficient, this material is highly suitable for thermal tuning of the transmission of a cavity. This is demonstrated by global infilling of a hole-type silicon photonic crystal slab and global thermal...
journal article 2011
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De Boer, W.D.A.M. (author), Trinh, M.T. (author), Timmerman, D. (author), Schins, J.M. (author), Siebbeles, L.D.A. (author), Greogorkiewicz, T. (author)
We report on investigations of optical generation of carriers in Si nanocrystals embedded in SiO2 matrix by time-resolved induced absorption technique. Results obtained for excitation below and above twice the bandgap energy h???2Eg show very similar decay characteristics (within ?resolution ? 100 fs). When intensity of the signal...
journal article 2011
Searched for: faculty:"Applied%5C%2BSciences"
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