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Efficiency enhancement calculations of state-of-the-art solar cells by luminescent layers with spectral shifting, quantum cutting, and quantum tripling function

Ten Kate, O.M. (author), De Jong, M. (author), Hintzen, H.T. (author), Van der Kolk, E. (author)

Solar cells of which the efficiency is not limited by the Shockley-Queisser limit can be obtained by integrating a luminescent spectral conversion layer into the cell structure. We have calculated the maximum efficiency of state-of-the-art c-Si, pc-Si, a-Si, CdTe, GaAs, CIS, CIGS, CGS, GaSb, and Ge solar cells with and without an integrated...

journal article 2013

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Transport through a single donor in p-type silicon

Miwa, J.A. (author), Mol, J.A. (author), Salfi, J. (author), Rogge, S. (author), Simmons, M.Y. (author)

Single phosphorus donors in silicon are promising candidates as qubits in the solid state. Here, we present low temperature scanning probe microscopy and spectroscopy measurements of individual phosphorus dopants deliberately placed in p-type silicon ?1?nm below the surface. The ability to image individual dopants combined with scanning...

journal article 2013

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Hydrogen termination of CVD diamond films by high-temperature annealing at atmospheric pressure

Seshan, V. (author), Ullien, D. (author), Castellanos-Gomez, A. (author), Sachdeva, S. (author), Murthy, D.H.K. (author), Savenije, T.J. (author), Ahmad, H.A. (author), Nunney, T.S. (author), Janssens, S.D. (author), Haenen, K. (author), Nesládek, M. (author), Van der Zant, H.S.J. (author), Sudhölter, E.J.R. (author), De Smet, L.C.P.M. (author)

A high-temperature procedure to hydrogenate diamond films using molecular hydrogen at atmospheric pressure was explored. Undoped and doped chemical vapour deposited (CVD) polycrystalline diamond films were treated according to our annealing method using a H2 gas flow down to ?50 ml/min (STP) at ?850?°C. The films were extensively evaluated by...

journal article 2013

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Printed circuit board metal powder filters for low electron temperatures

Mueller, F. (author), Schouten, R.N. (author), Brauns, M. (author), Gang, T. (author), Lim, W.H. (author), Lai, N.S. (author), Dzurak, A.S. (author), Van der Wiel, W.G. (author), Zwanenburg, F.A. (author)

We report the characterisation of printed circuit boards (PCB) metal powder filters and their influence on the effective electron temperature which is as low as 22 mK for a quantum dot in a silicon MOSFET structure in a dilution refrigerator. We investigate the attenuation behaviour (10 MHz–20 GHz) of filter made of four metal powders with a...

journal article 2013

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Current-induced nanogap formation and graphitization in boron-doped diamond films

Seshan, V. (author), Arroyo, C.R. (author), Castellanos-Gomez, A. (author), Prins, F. (author), Perrin, M.L. (author), Janssens, S.D. (author), Haenen, K. (author), Nesládek, M. (author), Sudhölter, E.J.R. (author), De Smet, L.C.P.M. (author), Van der Zant, H.S.J. (author), Dulic, D. (author)

A high-current annealing technique is used to fabricate nanogaps and hybrid diamond/graphite structures in boron-doped nanocrystalline diamond films. Nanometer-sized gaps down to ?1?nm are produced using a feedback-controlled current annealing procedure. The nanogaps are characterized using scanning electron microscopy and electronic transport...

journal article 2012

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Solid-phase crystallization of ultra high growth rate amorphous silicon films

Sharma, K. (author), Ponomarev, M.V. (author), Verheijen, M.A. (author), Kunz, O. (author), Tichelaar, F.D. (author), Van de Sanden, M.C.M. (author), Creatore, M. (author)

In this paper, we report on the deposition of amorphous silicon (a-Si:H) films at ultra-high growth rate (11–60?nm/s) by means of the expanding thermal plasma technique, followed by solid-phase crystallization (SPC). Large-grain (?1.5??m) polycrystalline silicon was obtained after SPC of high growth rate (?25?nm/s) deposited a-Si:H films. The...

journal article 2012

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Balanced ternary addition using a gated silicon nanowire

Mol, J.A. (author), Van der Heijden, J. (author), Verduijn, J. (author), Klein, M. (author), Remacle, F. (author), Rogge, S. (author)

Ternary logic has the lowest cost of complexity, here, we demonstrate a CMOS hardware implementation of a ternary adder using a silicon metal-on-insulator single electron transistor. Gate dependent rectifying behavior of a single electron transistor (SET) results in a robust three-valued output as a function of the potential of the single...

journal article 2011

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Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs

Paul, A. (author), Tettamanzi, G.C. (author), Lee, S. (author), Mehrotra, S.R. (author), Collaert, N. (author), Biesemans, S. (author), Rogge, S. (author), Klimeck, G. (author)

Channel conductance measurements can be used as a tool to study thermally activated electron transport in the sub-threshold region of state-of-art FinFETs. Together with theoretical tight-binding (TB) calculations, this technique can be used to understand the dependence of the source-to-channel barrier height (Eb) and the active channel area ...

journal article 2011

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Imaging the formation of a p-n junction in a suspended carbon nanotube with scanning photocurrent microscopy

Buchs, G. (author), Barkelid, K.M. (author), Bagiante, S. (author), Steele, G.A. (author), Zwiller, V. (author)

We use scanning photocurrent microscopy (SPCM) to investigate individual suspended semiconducting carbon nanotube devices where the potential profile is engineered by means of local gates. In situ tunable p-n junctions can be generated at any position along the nanotube axis. Combining SPCM with transport measurements allows a detailed...

journal article 2011

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Electron-beam-induced deposition of 3-nm-half-pitch patterns on bulk Si

Van Oven, J.C. (author), Berwald, F. (author), Berggren, K.K. (author), Kruit, P. (author), Hagen, C.W. (author)

This paper demonstrates electron-beam-induced deposition of few-nm-width dense features on bulk samples by using a scanning electron-beam lithography system. To optimize the resultant features, three steps were taken: (1) features were exposed in a repetitive sequence, so as to build up the deposited features gradually across the entire pattern,...

journal article 2011

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Tuning of a cavity in a silicon photonic crystal by thermal expansion of an elastomeric infill

Erdamar, A.K. (author), Van Leest, M.M. (author), Picken, S.J. (author), Caro, J. (author)

We use an elastomer as infill material for a photonic crystal. As a result of the thermal-expansion-induced strongly negative thermal optical coefficient, this material is highly suitable for thermal tuning of the transmission of a cavity. This is demonstrated by global infilling of a hole-type silicon photonic crystal slab and global thermal...

journal article 2011

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Increased carrier generation rate in Si nanocrystals in SiO2 investigated by induced absorption

De Boer, W.D.A.M. (author), Trinh, M.T. (author), Timmerman, D. (author), Schins, J.M. (author), Siebbeles, L.D.A. (author), Greogorkiewicz, T. (author)

We report on investigations of optical generation of carriers in Si nanocrystals embedded in SiO2 matrix by time-resolved induced absorption technique. Results obtained for excitation below and above twice the bandgap energy h??<?2Eg and h??>?2Eg show very similar decay characteristics (within ?resolution ? 100 fs). When intensity of the signal...

journal article 2011

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Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation

Johnson, B.C. (author), Tettamanzi, G.C. (author), Alves, A.D.C. (author), Thompson, S. (author), Yang, C. (author), Verduijn, J. (author), Mol, J.A. (author), Wacquez, R. (author), Vinet, M. (author), Sanquer, M. (author), Rogge, S. (author), Jamieson, D.N. (author)

We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic doping is crucial for overcoming dopant number variability in present nanoscale devices and for exploiting single...

journal article 2010

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Coherent transport through a double donor system in silicon

Verduijn, J. (author), Tettamanzi, G.C. (author), Lansbergen, G.P. (author), Collaert, N. (author), Biesemans, S. (author), Rogge, S. (author)

In this letter, we describe the observation of the interference of conduction paths induced by two donors in a nanoscale silicon transistor, resulting in a Fano resonance. This demonstrates the coherent exchange of electrons between two donors. In addition, the phase difference between the two conduction paths can be tuned by means of a magnetic...

journal article 2010

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Ultrasmall silicon quantum dots

Zwanenburg, F.A. (author), Van Loon, A.A. (author), Steele, G.A. (author), Rijmenam, C.E.W.M. (author), Balder, T. (author), Fang, Y. (author), Lieber, C.M. (author), Kouwenhoven, L.P. (author)

We report the realization of extremely small single quantum dots in p-type silicon nanowires, defined by Schottky tunnel barriers with Ni and NiSi contacts. Despite their ultrasmall size the NiSi–Si–NiSi nanowire quantum dots readily allow spectroscopy of at least ten consecutive holes, and additionally they display a pronounced excited-state...

journal article 2009

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Proximity effect in ion-beam-induced deposition of nanopillars

Chen, P. (author), Salemink, H.W.M. (author), Alkemade, P.F.A. (author)

Ion-beam-induced deposition (IBID) is a powerful technique for prototyping three-dimensional nanostructures. To study its capability for this purpose, the authors investigate the proximity effect in IBID of nanopillars. In particular, the changes in shape and dimension of pillars are studied when a second pillar is grown near an existing pillar....

journal article 2009

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Stimulated terahertz emission due to electronic Raman scattering in silicon

Pavlov, S.G. (author), Böttger, U. (author), Hovenier, J.N. (author), Abrosimov, N.V. (author), Riemann, H. (author), Zhukavin, R.K. (author), Shastin, V.N. (author), Redlich, B. (author), Van der Meer, A.F.G. (author), Hübers, H.W. (author)

Stimulated Raman emission in the terahertz frequency range (4.8–5.1 THz and 5.9–6.5 THz) has been realized by optical excitation of arsenic donor centers in silicon at low temperatures. The Stokes shift of the observed laser emission is 5.42 THz which is equal to the Raman-active donor electronic transition between the ground 1s(A1) and the...

journal article 2009

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Generation and transport of photoexcited electrons in single-crystal diamond

Heremans, F.J. (author), Fuchs, G.D. (author), Wang, C.F. (author), Hanson, R. (author), Awschalom, D.D. (author)

We report time-dependent photocurrent and transport measurements of sub-bandgap photoexcited carriers in nitrogen-rich (type Ib), single-crystal diamond. Transient carrier dynamics are characteristic of trapping conduction with long charge storage lifetimes of ? 3?hours. By measuring the photoexcited Hall effect, we confirm that the charge...

journal article 2009

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Single atom doping for quantum device development in diamond and silicon

Weis, C.D. (author), Schuh, A. (author), Batra, A. (author), Persaud, A. (author), Rangelow, I.W. (author), Bokor, J. (author), Lo, C.C. (author), Cabrini, S. (author), Sideras-Haddad, E. (author), Fuchs, G.D. (author), Hanson, R. (author), Awschalom, D.D. (author), Schenkel, T. (author)

The ability to inject dopant atoms with high spatial resolution, flexibility in dopant species, and high single ion detection fidelity opens opportunities for the study of dopant fluctuation effects and the development of devices in which function is based on the manipulation of quantum states in single atoms, such as proposed quantum computers....

journal article 2008

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Terahertz Raman laser based on silicon doped with phosphorus

Pavlov, S.G. (author), Hübers, H.W. (author), Böttger, U. (author), Zhukavin, R.K. (author), Shastin, V.N. (author), Hovenier, J.N. (author), Redlich, B. (author), Abrosimov, N.V. (author), Riemann, H. (author)

Raman-type stimulated emission at frequencies between 5.0 and 5.2?THz as well as between 6.1 and 6.4?THz has been realized in silicon crystals doped by phosphorus donors. The Raman laser operates at around 5?K under optical excitation by a pulsed, frequency-tunable infrared free electron laser. The frequencies of the observed laser emission are...

journal article 2008