Searched for: faculty%3A%22Applied%255C%252BSciences%22
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de Moor, M.W.A. (author), Bommer, J.D.S. (author), Xu, D. (author), Winkler, Georg W. (author), Antipov, Andrey E. (author), Bargerbos, A. (author), Wang, Guanzhong (author), van Loo, N. (author), op het Veld, R.L.M. (author), Gazibegovic, S. (author), Car, D. (author), Bakkers, E.P.A.M. (author), Kouwenhoven, Leo P. (author), Zhang, H. (author)
We study the effect of external electric fields on superconductor-semiconductor coupling by measuring the electron transport in InSb semiconductor nanowires coupled to an epitaxially grown Al superconductor. We find that the gate voltage induced electric fields can greatly modify the coupling strength, which has consequences for the proximity...
journal article 2018
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Van den Berg, J.W.G. (author)
doctoral thesis 2014
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Mescher, M. (author)
Silicon nanowires are structures made from silicon with at least one spatial dimension in the nanometer regime (1-100 nm). From these nanowires, silicon nanowire field-effect transistors can be constructed. Since their introduction in 2001 silicon nanowire field-effect transistors have been studied because of their promising application as...
doctoral thesis 2014
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Glazer, P.J. (author)
This dissertation describes experimental studies on the mechanisms underlying the dynamic response of polyelectrolyte hydrogels when submitted to an external electric potential. In addition, we explore the possibilities of miniaturization and manipulation of responsive gels and other soft matter systems by using microfabrication techniques....
doctoral thesis 2013
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Pfaff, W. (author), Vos, A. (author), Hanson, R. (author)
Metal nanostructures can be used to harvest and guide the emission of single photon emitters on-chip via surface plasmon polaritons. In order to develop and characterize photonic devices based on emitter-plasmon hybrid structures, a deterministic and scalable fabrication method for such structures is desirable. Here, we demonstrate deterministic...
journal article 2013
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Bugarini, G. (author), Reimer, M.E. (author), Zwiller, V. (author)
We report on the optical properties of single quantum dots in nanowires probed along orthogonal directions. We address the same quantum dot from either the nanowire side or along the nanowire axis via reflection on a micro-prism. The collected photoluminescence intensity from nanowires lying on a substrate is improved 3-fold using the prism as...
journal article 2012
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Versteegh, M.A.M. (author), Van Capel, P.J.S. (author), Dijkhuis, J.I. (author)
We present an ultrafast all-optical gated amplifier, or transistor, consisting of a forest of ZnO nanowire lasers. A gate light pulse creates a dense electron-hole plasma and excites laser action inside the nanowires. Source light traversing the nanolaser forest is amplified, partly as it is guided through the nanowires, and partly as it...
journal article 2012
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Bulgarini, G. (author), Reimer, M.E. (author), Zehender, T. (author), Hocevar, M. (author), Bakkers, E.P.A.M. (author), Kouwenhoven, L.P. (author), Zwiller, V. (author)
Nanowire waveguides with controlled shape are promising for engineering the collection efficiency of quantum light sources. We investigate the exciton lifetime in individual InAsP quantum dots, perfectly positioned on-axis of InP nanowire waveguides. We demonstrate control over the quantum dot spontaneous emission by varying the nanowire...
journal article 2012
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Wang, J. (author), Plissard, S. (author), Hocevar, M. (author), Vu, T.T.T. (author), Zehender, T. (author), Immink, G.G.W. (author), Verheijen, M.A. (author), Haverkort, J. (author), Bakkers, E.P.A.M. (author)
We investigate the growth of vertically standing [100] zincblende InP nanowire (NW) arrays on InP (100) substrates in the vapor-liquid-solid growth mode using low-pressure metal-organic vapor-phase epitaxy. Precise positioning of these NWs is demonstrated by electron beam lithography. The vertical NW yield can be controlled by different...
journal article 2012
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Diedenhofen, S.L. (author), Algra, R.E. (author), Bakkers, E.P.A.M. (author), Gómez Rivas, J. (author)
The propagation of light in layers of vertically aligned nanowires is determined by their unique and extreme optical properties. Depending on the nanowire filling fraction and their diameter, layers of nanowires form strongly birefringent media. This large birefringence gives rise to sharp angle dependent peaks in polarized reflection. We...
journal article 2011
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Reimer, M.E. (author), van Kouwen, M.P. (author), Barkelid, M. (author)
We report recent progress toward on-chip single photon emission and detection in the near infrared utilizing semiconductor nanowires. Our single photon emitter is based on a single InAsP quantum dot embedded in a p-n junction defined along the growth axis of an InP nanowire. Under forward bias, light is emitted from the single quantum dot by...
journal article 2011
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Marsili, F. (author), Najafi, F. (author), Herder, C. (author), Berggren, K.K. (author)
We developed an electrothermal model of NbN superconducting nanowire avalanche photodetectors (SNAPs) on sapphire substrates. SNAPs are single-photon detectors consisting of the parallel connection of N superconducting nanowires. We extrapolated the physical constants of the model from experimental data and we simulated the time evolution of the...
journal article 2011
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Perinetti, U. (author)
This thesis presents different optical experiments performed on semiconductor quantum dots. These structures allow to confine a small number of electrons and holes to a tiny region of space, some nm across. The aim of this work was to study the basic properties of different types of quantum dots made of various materials and with different...
doctoral thesis 2011
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Reimer, M.E. (author), Van Kouwen, M.P. (author), Barkelid, M. et al (author)
conference paper 2010
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Rosticher, M. (author), Ladan, F.R. (author), Maneval, J.P. (author), Dorenbos, S.N. (author), Zijlstra, T. (author), Klapwijk, T.M. (author), Zwiller, V. (author), Lupa?cu, A. (author), Nogues, G. (author)
We report the detection of single electrons using a Nb0.7Ti0.3N superconducting wire deposited on an oxidized silicon substrate. While it is known that this device is sensitive to single photons, we show that it also detects single electrons with kilo-electron-volt energy emitted from the cathode of a scanning electron microscope with an...
journal article 2010
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Dorenbos, S.N. (author), Sasakura, H. (author), Van Kouwen, M.P. (author), Akopian, N. (author), Adachi, S. (author), Namekata, N. (author), Jo, M. (author), Motohisa, J. (author), Kobayashi, Y. (author), Tomioka, K. (author), Fukui, T. (author), Inoue, S. (author), Kumano, H. (author), Natarajan, C.M. (author), Hadfield, R.H. (author), Zijlstra, T. (author), Klapwijk, T.M. (author), Zwiller, V. (author), Suemune, I. (author)
We report the experimental demonstration of single-photon and cascaded photon pair emission in the infrared, originating from a single InAsP quantum dot embedded in a standing InP nanowire. A regular array of nanowires is fabricated by epitaxial growth on an electron-beam patterned substrate. Photoluminescence spectra taken on single quantum...
journal article 2010
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Van Kouwen, M.P. (author), Van Weert, M.H.M. (author), Reimer, M.E. (author), Akopian, N. (author), Perinetti, U. (author), Algra, R.E. (author), Bakkers, E.P.A.M. (author), Kouwenhoven, L.P. (author), Zwiller, V. (author)
We report InP nanowire photodetectors with a single InAsP quantum dot as light absorbing element. With excitation above the InP band gap, the nanowire photodetectors are efficient (quantum efficiency of 4%). Under resonant excitation of the quantum dot, the photocurrent amplitude depends on the linear polarization direction of the incident light...
journal article 2010
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Van Weert, M.H.M. (author), Den Heijer, M. (author), Van Kouwen, M.P. (author), Algra, R.E. (author), Bakkers, E.P.A.M. (author), Kouwenhoven, L.P. (author), Zwiller, V. (author)
We report voltage dependent photoluminescence experiments on single indium arsenide phosphide (InAsP) quantum dots embedded in vertical surround-gated indium phosphide (InP) nanowires. We show that by tuning the gate voltage, we can access different quantum dot charge states. We study the anisotropic exchange splitting by polarization analysis,...
journal article 2010
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Tanner, M.G. (author), Natarajan, C.M. (author), Pottapenjara, V.K. (author), O'Connor, J.A. (author), Warburton, R.J. (author), Hadfield, R.H. (author), Baek, B. (author), Nam, S. (author), Dorenbos, S.N. (author), Bermúdez Ureña, E. (author), Zijlstra, T. (author), Klapwijk, T.M. (author), Zwiller, V. (author)
Superconducting nanowire single-photon detectors (SNSPDs) have emerged as a highly promising infrared single-photon detector technology. Next-generation devices are being developed with enhanced detection efficiency (DE) at key technological wavelengths via the use of optical cavities. Furthermore, new materials and substrates are being explored...
journal article 2010
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Akopian, N. (author), Van Weert, M. (author), Van Kouwen, M. (author), Algra, R. (author), Liu, L. (author), Patriarche, G. (author), Harmand, J.C. (author), Bakkers, E. (author), Kouwenhoven, L. (author), Zwiller, V. (author)
In this paper we present our recent developments in control and manipulation of individual spins and photons in a single nanowire quantum dot. Specific examples include demonstration of optical excitation of single spin states, charge tunable quantum devices and single photon sources. We will also discuss our recent discovery of a new type of...
conference paper 2010
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