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Trifunovic, M. (author), Shimoda, T. (author), Ishihara, R. (author)
Printing electronics has led to application areas which were formerly impossible with conventional electronic processes. Solutions are used as inks on top of large areas at room temperatures, allowing the production of fully flexible circuitry. Commonly, research in these inks have focused on organic and metal-oxide ink materials due to their...
journal article 2015
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Zhang, J. (author), Trifunovic, M. (author), Van der Zwan, M. (author), Takagishi, H. (author), Kawajiri, R. (author), Shimoda, T. (author), Beenakker, C.I.M. (author), Ishihara, R. (author)
Solution process of silicon will provide high-speed transistor fabrication with low-cost by, for example, roll-to-roll process. In this paper, a low-temperature process (350?°C) is reported for fabrication of high-quality Si devices on a polyimide substrate from doctor-blade coated liquid-Si. With this method, different semiconductor devices...
journal article 2013
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Tan, H. (author), Sivec, L. (author), Yan, B. (author), Santbergen, R. (author), Zeman, M. (author), Smets, A.H.M. (author)
We show experimentally that the photocurrent of thin-film hydrogenated microcrystalline silicon (?c-Si:H) solar cells can be enhanced by 4.5?mA/cm2 with a plasmonic back reflector (BR). The light trapping performance is improved using plasmonic BR with broader angular scattering and lower parasitic absorption loss through tuning the size of...
journal article 2013
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Dogan, I. (author), Kramer, N.J. (author), Westermann, R.H.J. (author), Dohnalova, K. (author), Smets, A.H.M. (author), Verheijen, M.A. (author), Greogorkiewicz, T. (author), Van de Sanden, M.C.M. (author)
We demonstrate a method for synthesizing free standing silicon nanocrystals in an argon/silane gas mixture by using a remote expanding thermal plasma. Transmission electron microscopy and Raman spectroscopy measurements reveal that the distribution has a bimodal shape consisting of two distinct groups of small and large silicon nanocrystals with...
journal article 2013
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Mok, K.R.C. (author), Naber, R.C.G. (author), Nanver, L.K. (author)
Emitter saturation current densities, Joe have been investigated with different boron implantation dose and annealing conditions. The higher thermal budgets used here are shown experimentally to improve Joe, implying more complete defect dissolution. Simulations show that significant degradation in Joe can be attributed to the presence of...
conference paper 2012
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Kind, R. (author), Van Swaaij, R.A.C.M.M. (author), Rubinelli, F.A. (author), Solntsev, S. (author), Zeman, M. (author)
The performance of hydrogenated amorphous silicon (a-Si:H) p-i-n solar cells is limited, as they contain a relatively high concentration of defects. The dark current voltage (JV) characteristics at low forward voltages of these devices are dominated by recombination processes. The recombination rate depends on the concentration of active...
journal article 2011
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Schulte, M. (author), Bittkau, K. (author), Jäger, K. (author), Ermes, M. (author), Zeman, M. (author), Pieters, B.E. (author)
Textured interfaces in thin-film silicon solar cells improve the efficiency by light scattering. A technique to get experimental access to the angular intensity distribution (AID) at textured interfaces of the transparent conductive oxide (TCO) and silicon is introduced. Measurements are performed on a sample with polished microcrystalline...
journal article 2011
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Illiberi, A. (author), Kudlacek, P. (author), Smets, A.H.M. (author), Creatore, M. (author), Van de Sanden, M.C.M. (author)
We have found that controlled Ar ion bombardment enhances the degradation of a-Si:H based surface passivation of c-Si surfaces. The decrease in the level of surface passivation is found to be independent on the ion kinetic energy (7–70 eV), but linearly proportional to the ion flux (6×1014–6×1015?ions?cm?2?s?1). This result suggests that the ion...
journal article 2011
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Lipovšek, B. (author), Kr?, J. (author), Isabella, O. (author), Zeman, M. (author), Topi?, M. (author)
Diffusive dielectric materials such as white paint have been demonstrated as effective back reflectors in the photovoltaic technology. In this work, a one-dimensional (1D) optical modeling approach for simulation of white paint films is developed and implemented in a 1D optical simulator for thin-film solar cells. The parameters of white paint,...
journal article 2010
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Wank, M.A. (author), Van Swaaij, R.A.C.M.M. (author), Kudlacek, P. (author), Van de Sanden, M.C.M. (author), Zeman, M. (author)
We have applied pulse-shaped biasing to the expanding thermal plasma deposition of hydrogenated amorphous silicon at substrate temperatures ? 200?°C and growth rates around 1 nm/s. Substrate voltage measurements and measurements with a retarding field energy analyzer demonstrate the achieved control over the ion energy distribution for...
journal article 2010
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Testa, G. (author), Huang, Y. (author), Sarro, P.M. (author), Zeni, L. (author), Bernini, R. (author)
The feasibility of an integrated silicon optofluidic ring resonator is demonstrated. Liquid core antiresonant reflecting optical waveguides are used to realize a rectangular ring resonator with a multimode interference liquid core coupler between the ring and the bus waveguide. In this configuration the same waveguide used to confine the light...
journal article 2010
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Isabella, O. (author), Kr?, J. (author), Zeman, M. (author)
Substrates with a modulated surface texture were prepared by combining different interface morphologies. The spatial frequency surface representation method is used to evaluate the surface modulation. When combining morphologies with appropriate geometrical features, substrates exhibit an increased scattering level in a broad wavelength region....
journal article 2010
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Wank, M.A. (author), Van Swaaij, R.A.C.M.M. (author), Van de Sanden, M.C.M. (author)
The surface roughness evolution of hydrogenated amorphous silicon (a-Si:H) films has been studied using in situ spectroscopic ellipsometry for a temperature range of 150–400?°C. The effect of external rf substrate biasing on the coalescence phase is discussed and a removal/densification of a hydrogen-rich layer is suggested to explain the...
journal article 2009
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Krc, J. (author), Zeman, M. (author), Luxembourg, S.L. (author), Topic, M. (author)
A concept of a modulated one-dimensional photonic-crystal (PC) structure is introduced as a back reflector for thin-film solar cells. The structure comprises two PC parts, each consisting of layers of different thicknesses. Using layers of amorphous silicon and amorphous silicon nitride a reflectance close to 100% is achieved over a broad...
journal article 2009
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Pieters, B.E. (author), Stiebig, H. (author), Zeman, M. (author), Van Swaaij, R.A.C.M.M. (author)
Microcrystalline silicon (?c-Si:H) is a promising material for application in multijunction thin-film solar cells. A detailed analysis of the optoelectronic properties is impeded by its complex microstructural properties. In this work we will focus on determining the mobility gap of ?c-Si:H material. Commonly a value of 1.1?eV is found, similar...
journal article 2009
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Matsuki, N. (author), Ishihara, R. (author), Baiano, A. (author), Beenakker, C.I.M. (author)
We used scanning capacitance microscopy (SCM) to investigate the electrical activity of grain boundaries consisting of random and coincidence-site-lattice (CSL) boundaries in location-controlled silicon islands, which were fabricated using the ?-Czochralski process with an excimer laser. The SCM results suggest that the electrical activity of...
journal article 2008
document
Civale, Y. (author), Nanver, L.K. (author), Alberici, S.G. (author), Gammon, A. (author), Kelly, I. (author)
A procedure has been implemented for a quantitative aluminum-doping profiling of µm-scale aluminum-induced solid-phase-epitaxy (SPE) Si islands formed at 400°C. The aluminum concentration was measured to be 1–2×1019 cm?3, which is about 10 times higher than previously reported electrical activation levels. The elemental concentration was...
journal article 2008
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Yan, F. (author), Migliorato, P. (author), Ishihara, R. (author)
The influence of twin boundaries on the characteristics of single grain-silicon thin film transistors has been analyzed by three-dimensional simulation. The simulations show that the orientation and the location of a twin boundary could affect the field-effect mobility and the leakage current of a device. The field-effect mobility increases with...
journal article 2007
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Yan, B. (author), Pham, H.T.M. (author), Ma, Y. (author), Zhuang, Y. (author), Sarro, P.M. (author)
The authors demonstrate a method for the fabrication of in situ ultrathin porous anodic aluminum oxide layers (aspect ratio<2:1) on Si, which can be directly used as templates for nanodot preparation and for pattern transfer. The regular shape of the aluminum oxide pores is maintained even when the thickness of the aluminum oxide template is...
journal article 2007
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He, M. (author), Ishihara, R. (author), Metselaar, W. (author), Beenakker, K. (author)
Strong preference for (100) surface and in-plane orientations has been observed in polycrystalline silicon film on SiO2 after crystallization with multiple excimer laser pulses. Laser induced periodic surface structure (LIPSS) is developed in the film, constructing self-assembled square-shaped grains. The clear texture can be observed in a...
journal article 2006
Searched for: faculty%3A%22Electrical%255C+Engineering%252C%255C+Mathematics%255C+and%255C+Computer%255C+Science%22
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