Characterization of pure boron depositions integrated in silicon diodes for nanometer-deep junction applications

Doping technologies for formation of ultrashallow and highly-doped p+ junctions are continuously demanded to face the challenges in front-end processing that have emerged due to the aggressive downscaling of vertical dimensions for future semiconductor devices. As an alternative to implantations, current solutions are based on in-situ boron (B)...

Saddle-point construction in the design of lithographic objectives, part 1: Method

Saddle-point construction in the design of lithographic objectives, part 2: Application

Designing lithographic objectives by constructing saddle points

Optical designers often insert or split lenses in existing designs. Here, we present, with examples from Deep and Extreme UV lithography, an alternative method that consists of constructing saddle points and obtaining new local minima from them. The method is remarkable simple and can therefore be easily integrated with the traditional design...