Searched for: subject%3A%223D%255C%2BIC%22
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Ishihara, R. (author), Zhang, J. (author), Trifunovic, M. (author), Derakhshandeh Kheljani, J. (author), Golshani, N. (author), Tajari Mofrad, M.R. (author), Chen, T. (author), Beenakker, C.I.M. (author), Shimoda, T. (author)
We review our recent achievements in monolithic 3D-ICs and flexible electronics based on single-grain Si TFTs that are fabricated inside a single-grain with a low-temperature process. Based on pulsed-laser crystallization and submicron sized cavities made in the substrate, amorphous-Si precursor film was converted into poly-Si having grains that...
journal article 2014
Jagtap, R.S. (author)
Planar scaling of semiconductor ICs for achieving higher integration seems to be on the brink of saturation. As an alternative solution, three-dimensional (3D) integration follows a more than Moore strategy in which circuit layers are stacked vertically. Although, 3D integration technology has moved from Lab to Fab, a complete supply chain is...
master thesis 2011
Winters, J. (author)
master thesis 2010