Searched for: subject%3A%224H%255C-SiC%22
(1 - 9 of 9)
document
Tang, Zhuorui (author), Gu, Lin (author), Jin, Lei (author), Dai, Kefeng (author), Mao, Chaobin (author), Wu, Sanzhong (author), Zhang, Rongwei (author), Yang, Jinsong (author), Zhang, Kouchi (author)
In this work, 4H-SiC homoepitaxial layers were grown on 4°off-axis substrates at different susceptor rotation speeds by using a hot-wall horizontal CVD reactor. The effect of different susceptor rotation speed on the quality of 4H-SiC epitaxial layers in terms of thickness, thickness uniformity, crystallinity, surface morphology and...
journal article 2024
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Tang, Zhuorui (author), Zhao, Shibo (author), Li, Jian (author), Zuo, Yuanhui (author), Tian, Jing (author), Tang, Hongyu (author), Fan, J. (author), Zhang, Kouchi (author)
This work addresses a novel technique for selecting the best process parameters for the 4H–SiC epitaxial layer in a horizontal hot-wall chemical vapor reactor using a transient multi-physical (thermal-fluid-chemical) simulation model and combined with a machine-learning model. An experiment was performed to validate the feasibility of the...
journal article 2024
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Zhang, Zhenhua (author)
As silicon carbide(SiC) gets more and more attention from the semiconductor industry due to its robust mechanical and chemical properties, reliable and standardized processing technologies such as reactive ion etching(RIE) for SiC are in great demand. This is because of the difficulty and challenge of fabricating micro devices on the SiC...
master thesis 2023
document
Romijn, J. (author), Vollebregt, S. (author), de Bie, Vincent G. (author), Middelburg, L.M. (author), el Mansouri, B. (author), van Zeijl, H.W. (author), May, Alexander (author), Erlbacher, Tobias (author), Leijtens, J.A.P. (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author)
The next generation of satellites will need to tackle tomorrow's challenges for communication, navigation and observation. In order to do so, it is expected that the amount of satellites in orbit will keep increasing, form smart constellations and miniaturize individual satellites to make access to space cost effective. To enable this next...
journal article 2023
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Zhang, Y. (author), Mo, J. (author), Vollebregt, S. (author), Zhang, Kouchi (author), May, Alexander (author), Erlbacher, Tobias (author)
The 4H-silicon carbide (SiC) exhibits excellent material characteristics, particularly in high-temperature, high-power, high-frequency applications. However, the reliability of SiC-based devices operating in harsh environments is a critical concern. While time-dependent dielectric breakdown (TDDB) in conventional SiC devices has been extensively...
conference paper 2023
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Zhang, Jingping (author), Luo, Houcai (author), Wu, Huan (author), Wang, Zeping (author), Zheng, Bofeng (author), Zhang, Kouchi (author), Chen, Xianping (author)
A novel 4H-SiC Multiple Stepped SGT MOSFET (MSGT-MOSFET) is presented and investigated utilizing TCAD simulations in this paper. We have quantitatively studied the characteristics of the device through simulation modeling and physical model calculations, and comparatively analyzed the performance and application prospects of this novel device...
journal article 2023
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Romijn, J. (author), Vollebregt, S. (author), May, Alexander (author), Erlbacher, Tobias (author), van Zeijl, H.W. (author), Leijtens, J.A.P. (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author)
In this paper, we present a quadrant sun position sensor microsystem device in a silicon carbide technology that operates in a field-of-view of ±33° and reaches a mean error of 1.9° in this range. This will allow, for the first time, an inherently visible blind sun position sensor in a CMOS compatible technology. Opto-electronic integration of...
conference paper 2022
document
Romijn, J. (author), Vollebregt, S. (author), Middelburg, L.M. (author), el Mansouri, B. (author), van Zeijl, H.W. (author), May, Alexander (author), Erlbacher, Tobias (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author)
The wide bandgap of silicon carbide (SiC) has attracted a large interest over the past years in many research fields, such as power electronics, high operation temperature circuits, harsh environmental sensing, and more. To facilitate research on complex integrated SiC circuits, ensure reproducibility, and cut down cost, the availability of a...
journal article 2022
document
Romijn, J. (author), Middelburg, L.M. (author), Vollebregt, S. (author), el Mansouri, B. (author), van Zeijl, H.W. (author), May, Alexander (author), Erlbacher, Tobias (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author)
Accurately sensing the temperature in silicon carbide (power) devices is of great importance to their reliable operation. Here, temperature sensors by resistive and CMOS structures are fabricated and characterized in an open silicon carbide CMOS technology. Over a range of 25-200°C, doped design layers have negative temperature coefficients of...
conference paper 2021
Searched for: subject%3A%224H%255C-SiC%22
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