A Thin-film Reconfigurable SiC Thermal Test Chip for Reliability Monitoring in Harsh Environments

Wide bandgap (WBG) semiconductor technologies enable significant progress in the emergence of power modules. Power cycling at elevated temperatures causes crack or delamination failure, especially at the die-attached bonded interface in the long term. Therefore, the in-situ reliability investigation of power modules, materials, and...

Investigation of geometrical properties of single-phase local resonators in the formation of bandgaps in three-dimensional elastic metamaterials

Elastic metamaterials – man-made resonant structures exhibiting unusual functionalities – have shown promising results for controlling structural vibration, specially at a low frequency regime. Such functionalities rely on the presence of resonant bandgaps, which consists of a frequency band where waves cannot propagate in response to the out-of...

Visible Blind Quadrant Sun Position Sensor in a Silicon Carbide Technology

In this paper, we present a quadrant sun position sensor microsystem device in a silicon carbide technology that operates in a field-of-view of ±33° and reaches a mean error of 1.9° in this range. This will allow, for the first time, an inherently visible blind sun position sensor in a CMOS compatible technology. Opto-electronic integration of...

Resistive and CTAT Temperature Sensors in a Silicon Carbide CMOS Technology

Accurately sensing the temperature in silicon carbide (power) devices is of great importance to their reliable operation. Here, temperature sensors by resistive and CMOS structures are fabricated and characterized in an open silicon carbide CMOS technology. Over a range of 25-200°C, doped design layers have negative temperature coefficients of...