A CMOS-Imager-Pixel-Based Temperature Sensor for Dark Current Compensation

This brief proposes employing each of the classical 4 transistor (4T) pinned photodiode (PPD) CMOS image sensor (CIS) pixels, for both imaging and temperature measurement, intended for compensating the CISs' dark current, and dark signal non-uniformity (DSNU). The proposed temperature sensors rely on the thermal behavior of MOSFETs working in...

Negative Offset Operation of Four-Transistor CMOS Image Pixels for Increased Well Capacity and Suppressed Dark Current

This letter presents an electrical method to reduce dark current as well as increase well capacity of four-transistor pixels in a CMOS image sensor, utilizing a small negative offset voltage to the gate of the transfer (TX) transistor particularly only when the TX transistor is off. As a result, using a commercial pixel in a 0.18 ?m CMOS process...