On-chip Temperature Compensation with a Reference Voltage Method for CMOS Image Sensors

This thesis presents a temperature-dependent reference control method to compensate for the temperature effect on CMOS image sensors from -40◦C to 125◦C. Recently, machine vision has been one of the most important applications for CMOS image sensors. However, the working environment and operation might generate large temperature variations and...

The design of a high speed CMOS image sensor: featuring global shutter, high dynamic range and flexible exposure control in 110nm technology

High speed imagers find applications in many fields such as scientific and medical imaging, automotive applications, machine vision and much more. In this thesis, the design of a high speed, high dynamic range (HDR) CMOS sensor with electronic global shutter (GS) and flexible exposure control is presented. The sensor is designed in the 0.11μm...

Integrating a Temperature Sensor into a CMOS Image Sensor

Dark current noise in image sensors is highly sensitive to temperature, and a difference in temperature in image sensors can be seen in the image as a non-uniform noise source. Many CMOS image sensors are integrated in mobile devices and lack a physical shutter to generate dark frame subtraction to compensate for dark current noise. In this...

The Design of a Stitched, High-dynamic Range CMOS Particle Sensor

This thesis presents the design of a stitched, high-dynamic range particle sensor in 0.18 µm technology, which has three different configurations of 4096*4096 (4K), 8192*8192 (8K) and 12288*12288 (12K) pixels. It can be operated at 65 MHz with a target of 5 e- RMS noise and 92 dB dynamic range. The architecture of the whole sensor is explained...

The design of a 16*16 pixels CMOS image sensor with 0.5 e- RMS noise

Low noise image sensors can see images by just a few photons have a wide application in both the scientific and economic fields. This thesis presents a design of a 16*16 pixels CMOS image sensor with a target noise level in the order of 0.5 electrons RMS in 0.18?m technology, which has a potential to catch a large amount of low light imaging...

The design of a global shutter CMOS image sensor in 110nm technology

The goal of this work described in this thesis is to design a CMOS image sensor chip, implementing pixels with a 4.8?m pitch with a peripheral readout circuitry in a 110nm CMOS process. The architecture of the CMOS image sensor is presented, with a functional illustration for every block. The 8T global shutter pixel noise, circuit and layout are...

A Double-mode Linear Imaging System for IC-compatible Microspectrometers in Visible Light

In this thesis, a double-mode linear imaging system is designed for the application of microspectrometers. The imaging system is optimized so as to work with a Planar Double Grating System and a Linear Variable Optical Filter, the combinations of which would be suitable candidates of high-resolution low-cost microspectrometers. This linear...

Charge Domain Interlacing CMOS Image Sensor Design

This thesis presents a CMOS image sensor which can implement the charge domain interlacing principle. Inspired by the shared amplifier pixel structure and based on a pinned photodiode four transistor (4T) structure, two innovative pixel designs combined with two different readout directions are presented. These novel pixels are designed to fit...