High-Performance Back-Illuminated Three-Dimensional Stacked Single-Photon Avalanche Diode Implemented in 45-nm CMOS Technology

We present a high-performance back-illuminated three-dimensional stacked single-photon avalanche diode (SPAD), which is implemented in 45-nm CMOS technology for the first time. The SPAD is based on a P⁺/Deep N-well junction with a circular shape, for which N-well is intentionally excluded to achieve a wide depletion region, thus...

High Efficiency UV Photodiodes fabricated on p-type Substrate

Newly developed “pure-boron” photodiodes, with high sensitivity and stability in the whole ultraviolet range (UV), are described. The main purpose of this work is to create and characterize a large-area UV photodiode, representing a structure of a pixel in a backside illuminated CMOS image sensor, featuring maximum fill factor and hence...