DotFETs: MOSFETs strained by a Single SiGE dot in a Low-Temperature ELA Technology

The work presented in this thesis was performed in the context of the European Sixth Framework Program FP6 project “Disposable Dot Field Effect Transistor for High Speed Si Integrated Circuits”, referred to as the D-DotFET project. The project had the goal of realizing strain-enhanced mobility in CMOS transistors by transferring strain from a...