A Sub-1 V Capacitively Biased BJT-Based Temperature Sensor With an Inaccuracy of ± 0.15 ∘ C (3 σ ) From − 55 ∘ C to 125 ∘ C

This article presents a sub-1 V bipolar junction transistor (BJT)-based temperature sensor that achieves both high accuracy and high energy efficiency. To avoid the extra headroom required by conventional current sources, the sensor’s diode-connected BJTs are biased by precharging sampling capacitors to the supply voltage and then discharging...

A 117DB in-Band CMRR 98.5DB SNR Capacitance-to-Digital Converter for Sub-NM Displacement Sensing with an Electrically Floating Target

This paper describes a high-performance Capacitance-to-Digital Converter (CDC) for sub-nm displacement sensing with an electrically floating target. Intended to be integrated into a displacement sensor probe, the CDC consumes only 560μW. It achieves 98.5dB SNR in a 1ms conversion time, which is 34 times more energy-efficient than the prior...

A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from -55 to 125°C

This paper describes an energy-efficient CMOS temperature sensor intended for use in RFID tags. The sensor achieves an inaccuracy of ±0.15°C (3σ) over the military temperature range (-55 to 125°C) and dissipates only 27nJ/conversion: over 20× less than a previous sensor with comparable accuracy and resolution [2]. This energy efficiency is...