Searched for: subject%3A%22Finite%255C%252Belement%22
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document
Allahyari, P. (author), Silani, M. (author), Yaghoubi Nasrabadi, V. (author), Milovanovic, P. (author), Schmidt, F. N. (author), Busse, B. (author), Qwamizadeh, M. (author)
Bone encompasses a complex arrangement of materials at different length scales, which endows it with a range of mechanical, chemical, and biological capabilities. Changes in the microstructure and characteristics of the material, as well as the accumulation of microcracks, affect the bone fracture properties. In this study, two-dimensional...
journal article 2023
document
Schmidt, Mathias (author), Noel, L.F.P. (author), Doble, Keenan (author), Evans, John A. (author), Maute, Kurt (author)
This paper presents an immersed, isogeometric finite element framework to predict the response of multi-material, multi-physics problems with complex geometries using locally refined discretizations. To circumvent the need to generate conformal meshes, this work uses an extended finite element method (XFEM) to discretize the governing...
journal article 2023
document
Auriac, A. (author), Spaans, K.H. (author), Sigmundsson, F. (author), Hooper, A. (author), Schmidt, P. (author), Lund, B. (author)
A broad uplift occurs in Iceland in response to the retreat of ice caps, which began circa 1890. Until now, this deformation signal has been measured primarily using GPS at points some distance away from the ice caps. Here, for the first time we use satellite radar interferometry (interferometric synthetic aperture radar) to constrain uplift of...
journal article 2013
document
Hrauda, N. (author), Zhang, J.J. (author), Stangl, J. (author), Rehman-Khan, A. (author), Bauer, G. (author), Stoffel, M. (author), Schmidt, O.G. (author), Jovanovich, V. (author), Nanver, L.K. (author)
In this work self-organized SiGe islands are used as stressors for Si capping layers, which later act as carrier channels in field effect transistors. To be able to address individual islands and to obtain a sufficiently narrow distribution of their properties, the SiGe islands are grown by molecular beam epitaxy on prepatterned Si substrates,...
journal article 2009
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