Searched for: subject%3A%22Gates%22
(1 - 3 of 3)
document
Overwater, R.W.J. (author), Babaie, M. (author), Sebastiano, F. (author)
Cryogenic CMOS (cryo-CMOS) circuits are often hindered by the cryogenic threshold-voltage increase. To mitigate such an increase, a forward body biasing (FBB) technique in bulk CMOS is proposed, which can operate up to the nominal supply without problematic leakage currents, thanks to the larger diode turn-on voltage at cryogenic temperatures...
journal article 2023
document
Gong, J. (author), Chen, Y. (author), Charbon-Iwasaki-Charbon, E. (author), Sebastiano, F. (author), Babaie, M. (author)
This article presents a 4-to-5GHz LC oscillator operating at 4.2K for quantum computing applications. The phase noise (PN) specification of the oscillator is derived based on the control fidelity for a single-qubit operation. To reveal the substantial gap between the theoretical predictions and measurement results at cryogenic temperatures, a...
journal article 2022
document
't Hart, P.A. (author), Babaie, M. (author), Charbon-Iwasaki-Charbon, E. (author), Vladimirescu, A. (author), Sebastiano, F. (author)
This paper presents a device matching study of a commercial 40-nm bulk CMOS technology operated at cryogenic temperatures. Transistor pairs and linear arrays, optimized for device matching, were characterized over the temperature range from 300 K down to 4.2 K. The device parameters relevant for mismatch, i.e., the threshold voltage and the...
journal article 2020