Searched for: subject:"HBT"
(1 - 7 of 7)
document
Setekera, R. (author)
With the current increasing demand for faster and more reliable communication and computing electronic devices such as faster wireless communication networks, circuit designers are forced to carry out device optimization in order to achieve the maximum possible performance. To enable full circuit optimization, designers depend on compact models...
doctoral thesis 2016
document
Rathod, D. (author)
To realize optimum performance, SiGe HBTs are typically designed with heavily doped implanted collectors. For practical circuits operating at either high collector current density (Jc) or high collector-base voltage (Vcb) avalanche multiplication is an important effects that must be accurately measured and modeled. For example in digital...
master thesis 2013
document
Buisman, K. (author)
This thesis work addresses semiconductor device technology, characterization and modeling solutions that support the development of future generations of mobile phones, which are able to handle various wireless services in flexible manner. Today’s plurality of high data-rate communication signals requires high linearity and efficiency of the...
doctoral thesis 2011
document
Nanver, L.K. (author), Schellevis, H. (author), Scholtes, T.L.M. (author), La Spina, L. (author), Lorito, G. (author), Sarubbi, F. (author), Gonda, V. (author), Popadic, M. (author), Buisman, K. (author), De Vreede, L.C.N. (author)
This paper reviews special RF/microwave silicon device implementations in a process that allows two-sided contacting of the devices: the back-wafer contacted silicon-on-glass (SOG) substrate-transfer technology (STT) developed at DIMES. In this technology, metal transmission lines can be placed on the low-loss glass substrate, while the...
journal article 2009
document
La Spina, L. (author)
Nowadays, electrothermal effects (ET) are posing fundamental issues in nearly all branches of micro- and nano-electronics. Due to either a high power dissipation level or to the aggressive electrical isolation schemes adopted to increase the speed, both high and low power devices are affected by ET effects that limit their reliability and cause...
doctoral thesis 2009
document
Wu, H.C. (author)
In this thesis, a referenced based scaling approach and its parameter extraction for the bipolar transistor model Mextram is proposed. It is mainly based on the physical properties of the Mextram parameters, which scale with the junction temperature and geometry of the bipolar transistor. The scalable electrical parameter in the scaling rules is...
doctoral thesis 2007
document
Cuoco, V. (author)
doctoral thesis 2006
Searched for: subject:"HBT"
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