Method for improving the aspect ratio of ultrahigh-resolution structures in negative electron-beam resist

A method for improving the aspect ratio of ultrahigh-resolution structures in negative electron-beam resist is provided for enhanced pattern-transfer capabilities. The essence of the proposed method is to form a protective “cap” on top of the resist structure by means of electron-beam-induced deposition (EBID) in a self-aligned approach. This is...

Sub-10-nm nanolithography with a scanning helium beam

Scanning helium ion beam lithography is presented as a promising pattern definition technique for dense sub-10-nm structures. The powerful performance in terms of high resolution, high sensitivity, and a low proximity effect is demonstrated in a hydrogen silsesquioxane resist.

Influence of hydrogen silsesquioxane resist exposure temperature on ultrahigh resolution electron beam lithography

Performance of hydrogen silsesquioxane (HSQ) resist material with respect to the temperature during electron beam exposure was investigated. Electron beam exposure at elevated temperatures up to 90?°C shows sensitivity rise and slight contrast (?) degradation compared to lower temperature cases. Ultrahigh resolution structures formed at elevated...