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Zhang, C. (author), Lindner, S.A. (author), Antolović, I.M. (author), Wolf, Martin (author), Charbon-Iwasaki-Charbon, E. (author)Per-pixel time-to-digital converter (TDC) architectures have been exploited by single-photon avalanche diode (SPAD) sensors to achieve high photon throughput, but at the expense of fill factor, pixel pitch and readout efficiency. In contrast, TDC sharing architecture usually features high fill factor at small pixel pitch and energy efficient...journal article 2018
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Snaevarsdottir, Fjola (author)Imaging sensors are remarkable devices which are able to capture moments and present them in a form available to us for years to come. With the use of material properties and photon particles, charges can be produced which, in combination with electric circuitry, transform into information understandable to the human eye and eventually the brain...master thesis 2018
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Antolović, I.M. (author)The aim of this research is to explore the potential advantages of SPAD imagers used in microscopy. An ideal microscopy detector requires high sensitivity (high quantum efficiency QE or photon detection probability PDP), photon counting operation, low noise (dark current or dark count rate), timing resolution in the order of 100 ps, frame rate...doctoral thesis 2018
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Ge, X. (author), Theuwissen, A.J.P.A.M. (author)This paper presents a temporal noise analysis of charge-domain sampling readout circuits for Complementary Metal-Oxide Semiconductor (CMOS) image sensors. In order to address the trade-off between the low input-referred noise and high dynamic range, a Gm-cell-based pixel together with a charge-domain correlated-double sampling (CDS) technique...journal article 2018
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Pilavaki, Evdokia (author), Valente, V. (author), Demosthenous, Andreas (author)Point-of-care systems for the detection of infectious diseases are in great demand especially in developing countries. Lateral flow immunoassays are considered ideal biosensors for point-of-care diagnostics due to their numerous advantages. However, to quantify their results a low power, robust electronic reader is needed. A low power CMOS...journal article 2018
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Abarca Prouza, A.N. (author), Xie, S. (author), Markenhof, Jules (author), Theuwissen, A.J.P.A.M. (author)In this work, a novel approach for measuring relative temperature variations across the active area of a CMOS image sensor itself is presented. 555 Image pixels have been replaced by temperature sensors pixels (Tixels) in the same pixel array layer. Both sensors, pixels and Tixels, utilize the same readout structure to obtain the data. This...journal article 2018
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Ronchini Ximenes, A. (author), Padmanabhan, P. (author), Charbon-Iwasaki-Charbon, E. (author)Direct time-of-flight (dTOF) image sensors require accurate and robust timing references for precise depth calculation. On-chip timing references are well-known and understood, but for imaging systems where several thousands of pixels require seamless references, area and power consumption limit the use of more traditional synthesizers, such as...journal article 2018
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Lee, M.J. (author), Ronchini Ximenes, A. (author), Padmanabhan, P. (author), Wang, Tzu Jui (author), Huang, Kuo Chin (author), Yamashita, Yuichiro (author), Yaung, Dun Nian (author), Charbon-Iwasaki-Charbon, E. (author)We present a high-performance back-illuminated three-dimensional stacked single-photon avalanche diode (SPAD), which is implemented in 45-nm CMOS technology for the first time. The SPAD is based on a P<sup>+</sup>/Deep N-well junction with a circular shape, for which N-well is intentionally excluded to achieve a wide depletion region, thus...journal article 2018
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Ge, X. (author), Theuwissen, A.J.P.A.M. (author)A deep subelectron temporal noise CMOS image sensor (CIS) with a Gm-cell based pixel and a correlated-double charge-domain sampling technique has been developed for photon-starved imaging applications. With the proposed technique, the CIS, which is implemented in a standard 0.18-μm CIS process, features pixel-level amplification and achieves an...journal article 2017
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- Sun, P. (author) doctoral thesis 2016
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Xu, Y. (author)This thesis gives an insightful analysis of the pinned photodiode 4T CMOS pixel from three different aspects. Firstly, from the charge accumulated aspect, the PPD full well capacity and related parameters of influence are investigated such as the pinning voltage, and transfer gate potential barrier. Secondly, from the charge transfer aspect, the...doctoral thesis 2015
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Markenhof, J. (author)Dark current noise in image sensors is highly sensitive to temperature, and a difference in temperature in image sensors can be seen in the image as a non-uniform noise source. Many CMOS image sensors are integrated in mobile devices and lack a physical shutter to generate dark frame subtraction to compensate for dark current noise. In this...master thesis 2015
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Arslan, A. (author)Digital flat panel X-ray imagers are currently using a-Si and poly-Si thin-film-transistors (TFTs). a-Si TFT permits the use of large area substrates, however, due to the amorphous nature, the carrier mobility is very low (<1 cm2/Vs). Poly-Si TFT improves the mobility (~150 cm2/Vs) but due to random grain boundaries, the defect density is still...doctoral thesis 2015
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Ramachandra Rao, P. (author), Milosavljevic, S. (author), Kroth, U. (author), Laubis, C. (author), Nihtianov, S. (author)Newly developed “pure-boron” photodiodes, with high sensitivity and stability in the whole ultraviolet range (UV), are described. The main purpose of this work is to create and characterize a large-area UV photodiode, representing a structure of a pixel in a backside illuminated CMOS image sensor, featuring maximum fill factor and hence...lecture notes 2014
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Zhu, J. (author)This thesis presents the design of a stitched, high-dynamic range particle sensor in 0.18 µm technology, which has three different configurations of 4096*4096 (4K), 8192*8192 (8K) and 12288*12288 (12K) pixels. It can be operated at 65 MHz with a target of 5 e- RMS noise and 92 dB dynamic range. The architecture of the whole sensor is explained...master thesis 2014
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Ishihara, R. (author), Zhang, J. (author), Trifunovic, M. (author), Derakhshandeh Kheljani, J. (author), Golshani, N. (author), Tajari Mofrad, M.R. (author), Chen, T. (author), Beenakker, C.I.M. (author), Shimoda, T. (author)We review our recent achievements in monolithic 3D-ICs and flexible electronics based on single-grain Si TFTs that are fabricated inside a single-grain with a low-temperature process. Based on pulsed-laser crystallization and submicron sized cavities made in the substrate, amorphous-Si precursor film was converted into poly-Si having grains that...journal article 2014
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Yao, Q. (author)Low noise image sensors can see images by just a few photons have a wide application in both the scientific and economic fields. This thesis presents a design of a 16*16 pixels CMOS image sensor with a target noise level in the order of 0.5 electrons RMS in 0.18?m technology, which has a potential to catch a large amount of low light imaging...master thesis 2013
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Tan, J. (author)This thesis investigates the ionizing radiation effects on 4T pixels and the elementary in-pixel test devices with regard to the electrical performance and the optical performance. In addition to an analysis of the macroscopic pixel parameter degradation, the radiation-induced degradation mechanisms are also presented from the microscopic...doctoral thesis 2013
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Etoh, T.G. (author), Son, D.V.T. (author), Yamada, T. (author), Charbon, E. (author)The ISIS is an ultra-fast image sensor with in-pixel storage. The evolution of the ISIS in the past and in the near future is reviewed and forecasted. To cover the storage area with a light shield, the conventional frontside illuminated ISIS has a limited fill factor. To achieve higher sensitivity, a BSI ISIS was developed. To avoid direct...journal article 2013
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Liu, Y. (author)This thesis presents the design of a dual-transfer-gate high dynamic range CMOS image sensor. Several methods that can be applied to extend the dynamic range have been developed. However, all of these solutions have undesired problems, such as nonlinearity response, higher dark current shot noise and discontinues signal-to-noise ratio. In this...master thesis 2012