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Abarca, Accel (author), Theuwissen, A.J.P.A.M. (author)This paper presents a novel technique for dark current compensation of a CMOS image sensor (CIS) by using in-pixel temperature sensors (IPTSs) over a temperature range from −40 °C to 90 °C. The IPTS makes use of the 4T pixel as a temperature sensor. Thus, the 4T pixel has a double functionality, either as a pixel or as a temperature sensor....journal article 2023
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Theuwissen, A.J.P.A.M. (author)This article focuses on the parasitic light sensitivity (PLS) of a commercially available CMOS camera with a global shutter (with a storage node in the charge domain) and shared pixel architecture. The PLS is characterized as a function of both the wavelength and the incident angle of the incoming light. The measurement results are linked to...journal article 2022
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Theuwissen, A.J.P.A.M. (author)This article focuses on the angular dependency of the light sensitivity of a commercially available CMOS camera with a global shutter (storage node (SG) in the charge domain) and shared pixel architecture. The angular dependency is characterized as a function of both the wavelength and the angle of incidence of the incoming light. The...journal article 2022
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Han, L. (author), Theuwissen, A.J.P.A.M. (author)This letter introduces a Gm-cell-based CMOS image sensor (CIS) achieving deep subelectron noise performance. The CIS presents a new compensation block and low-noise current source to improve the performance of the Gm pixel. Furthermore, an optional first-order IIR filter is implemented to improve the output swing. The conversion gain, full...journal article 2021
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Abarca Prouza, A.N. (author), Theuwissen, A.J.P.A.M. (author)This article presents in-pixel (of a CMOS image sensor (CIS) temperature sensors with improved accuracy in the spatial and the temporal domain. The goal of the temperature sensors is to be used to compensate for dark (current) fixed pattern noise (FPN) during the exposure of the CIS. The temperature sensors are based on substrate parasitic...journal article 2020
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Xie, S. (author), Theuwissen, A.J.P.A.M. (author)This paper presents a CMOS image sensor (CIS) with a zoom ADC, to quantize in-pixel temperature sensors, as well as for faster readout speed of the image pixels while maintaining low quantization noise. The proposed 15 bit zoom ADC has a 4 bit Unit Capacitor Array (UCA) SAR and a 13 bit incremental 2<sup>nd</sup>-order delta-sigma ADC (DSADC)...journal article 2020
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Xie, S. (author), Theuwissen, A.J.P.A.M. (author)This brief proposes a successive approximation register (SAR) analog-to-digital converter (ADC) whose readout speed is improved by 33%, through applying a digital error correction (DEC) method, compared to an alternative without using the DEC technique. The proposed addition-only DEC alleviates the ADC's incomplete settling errors, hence...journal article 2020
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Xie, S. (author), Abarca Prouza, A.N. (author), Theuwissen, A.J.P.A.M. (author)This brief proposes employing each of the classical 4 transistor (4T) pinned photodiode (PPD) CMOS image sensor (CIS) pixels, for both imaging and temperature measurement, intended for compensating the CISs' dark current, and dark signal non-uniformity (DSNU). The proposed temperature sensors rely on the thermal behavior of MOSFETs working in...journal article 2020
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Xie, S. (author), Theuwissen, A.J.P.A.M. (author)This paper analyzes and compensates for process and temperature dependency among a (Complementary Metal Oxide Semiconductor) CMOS image sensor (CIS) array. Both the analysis and compensation are supported with experimental results on the CIS’s dark current, dark signal non-uniformity (DSNU), and conversion gain (CG). To model and to...journal article 2019
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Xie, S. (author), Theuwissen, A.J.P.A.M. (author)This paper presents methodologies for suppressing the spatial and the temporal noise in a CMOS image sensor (CIS). First of all, it demonstrates by using a longer-length column bias transistor, both the fixed pattern noise (FPN) and temporal noise can be suppressed. Meantime, it employs column-level oversampling delta-sigma ADCs to suppress...journal article 2019
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Goji Etoh, Takeharu (author), Okinaka, Tomo (author), Takano, Yasuhide (author), Takehara, Kohsei (author), Nakano, Hitoshi (author), Shimonomura, Kazuhiro (author), Ando, Taeko (author), Ngo, Nguyen (author), Zhang, C. (author)Light in flight was captured by a single shot of a newly developed backside-illuminated multi-collection-gate image sensor at a frame interval of 10 ns without high-speed gating devices such as a streak camera or post data processes. This paper reports the achievement and further evolution of the image sensor toward the theoretical temporal...journal article 2019
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Zhang, C. (author), Lindner, S.A. (author), Antolović, I.M. (author), Wolf, Martin (author), Charbon-Iwasaki-Charbon, E. (author)Per-pixel time-to-digital converter (TDC) architectures have been exploited by single-photon avalanche diode (SPAD) sensors to achieve high photon throughput, but at the expense of fill factor, pixel pitch and readout efficiency. In contrast, TDC sharing architecture usually features high fill factor at small pixel pitch and energy efficient...journal article 2018
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Ge, X. (author), Theuwissen, A.J.P.A.M. (author)This paper presents a temporal noise analysis of charge-domain sampling readout circuits for Complementary Metal-Oxide Semiconductor (CMOS) image sensors. In order to address the trade-off between the low input-referred noise and high dynamic range, a Gm-cell-based pixel together with a charge-domain correlated-double sampling (CDS) technique...journal article 2018
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Pilavaki, Evdokia (author), Valente, V. (author), Demosthenous, Andreas (author)Point-of-care systems for the detection of infectious diseases are in great demand especially in developing countries. Lateral flow immunoassays are considered ideal biosensors for point-of-care diagnostics due to their numerous advantages. However, to quantify their results a low power, robust electronic reader is needed. A low power CMOS...journal article 2018
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Abarca Prouza, A.N. (author), Xie, S. (author), Markenhof, Jules (author), Theuwissen, A.J.P.A.M. (author)In this work, a novel approach for measuring relative temperature variations across the active area of a CMOS image sensor itself is presented. 555 Image pixels have been replaced by temperature sensors pixels (Tixels) in the same pixel array layer. Both sensors, pixels and Tixels, utilize the same readout structure to obtain the data. This...journal article 2018
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Ronchini Ximenes, A. (author), Padmanabhan, P. (author), Charbon-Iwasaki-Charbon, E. (author)Direct time-of-flight (dTOF) image sensors require accurate and robust timing references for precise depth calculation. On-chip timing references are well-known and understood, but for imaging systems where several thousands of pixels require seamless references, area and power consumption limit the use of more traditional synthesizers, such as...journal article 2018
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Lee, M.J. (author), Ronchini Ximenes, A. (author), Padmanabhan, P. (author), Wang, Tzu Jui (author), Huang, Kuo Chin (author), Yamashita, Yuichiro (author), Yaung, Dun Nian (author), Charbon-Iwasaki-Charbon, E. (author)We present a high-performance back-illuminated three-dimensional stacked single-photon avalanche diode (SPAD), which is implemented in 45-nm CMOS technology for the first time. The SPAD is based on a P<sup>+</sup>/Deep N-well junction with a circular shape, for which N-well is intentionally excluded to achieve a wide depletion region, thus...journal article 2018
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Ge, X. (author), Theuwissen, A.J.P.A.M. (author)A deep subelectron temporal noise CMOS image sensor (CIS) with a Gm-cell based pixel and a correlated-double charge-domain sampling technique has been developed for photon-starved imaging applications. With the proposed technique, the CIS, which is implemented in a standard 0.18-μm CIS process, features pixel-level amplification and achieves an...journal article 2017
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Ishihara, R. (author), Zhang, J. (author), Trifunovic, M. (author), Derakhshandeh Kheljani, J. (author), Golshani, N. (author), Tajari Mofrad, M.R. (author), Chen, T. (author), Beenakker, C.I.M. (author), Shimoda, T. (author)We review our recent achievements in monolithic 3D-ICs and flexible electronics based on single-grain Si TFTs that are fabricated inside a single-grain with a low-temperature process. Based on pulsed-laser crystallization and submicron sized cavities made in the substrate, amorphous-Si precursor film was converted into poly-Si having grains that...journal article 2014
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Etoh, T.G. (author), Son, D.V.T. (author), Yamada, T. (author), Charbon, E. (author)The ISIS is an ultra-fast image sensor with in-pixel storage. The evolution of the ISIS in the past and in the near future is reviewed and forecasted. To cover the storage area with a light shield, the conventional frontside illuminated ISIS has a limited fill factor. To achieve higher sensitivity, a BSI ISIS was developed. To avoid direct...journal article 2013
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