Fundamental Characteristics of a Pinned Photodiode CMOS Pixels

This thesis gives an insightful analysis of the pinned photodiode 4T CMOS pixel from three different aspects. Firstly, from the charge accumulated aspect, the PPD full well capacity and related parameters of influence are investigated such as the pinning voltage, and transfer gate potential barrier. Secondly, from the charge transfer aspect, the...

Charge Domain Interlacing CMOS Image Sensor Design

This thesis presents a CMOS image sensor which can implement the charge domain interlacing principle. Inspired by the shared amplifier pixel structure and based on a pinned photodiode four transistor (4T) structure, two innovative pixel designs combined with two different readout directions are presented. These novel pixels are designed to fit...