Technology Development for MEMS: A Tutorial

Silicon sensors date back to before 1960 with early Hall and piezoresistive devices. These used simple processing that was part of the early integrated circuit (IC) industry. As the IC industry developed, silicon sensors could benefit from the technological advances. As silicon sensors advanced, there came the need for new technologies...

Design, Modelling and Fabrication of a 40-330 Hz Dual-Mass MEMS Gyroscope on Thick-SOI Technology

This work reports the design, modelling, fabrication and preliminary functionality testing of a dual-mass MEMS vibratory gyroscope for application in medical instrumentation, among others. The two-framed gyro has drive and sense mode resonance frequencies of 2500Hz and 2830Hz, with its bandwidth tunable between 40-330Hz. Adopted design and...

PECVD silicon carbide surface micromachining technology and selected MEMS applications

Attractive material properties of plasma enhanced chemical vapour deposited (PECVD) silicon carbide (SiC) when combined with CMOS-compatible low thermal budget processing provides an ideal technology platform for developing various microelectromechanical systems (MEMS) devices and merging them with integrated circuits. In this paper we present a...

Design and Modeling of a Flexible Contact-Mode Piezoresistive Detector for Time-Based Acceleration Sensing

This work reports on the design and modeling of a new flexible contact-mode 1-DOF piezoresistive contact force and impacttime detector used for acceleration sensing in the time domain. The key advantages of the contact-mode detection mechanism are the use of simple readout circuitry, compactness, good linearity, scalability, and the potential to...

Robust Wafer-Level Thin-Film Encapsulation (Packaging) of Microstructures (MEMS) using Low Stress PECVD Silicon Carbide

This paper presents a new low-cost, CMOS-compatible and robust wafer-level encapsulation technique developed using a stress-optimised PECVD SiC as the capping and sealing material, imparting harsh environment capability. This technique has been applied for the fabrication and encapsulation of a wide variety of surface- and thin-SOI...

SOI Digital Accelerometer Based on Pull-in Time Configuration

The operation principle, design, fabrication and measurement results of a quasi digital accelerometer fabricated on a thin silicon-on-insulator (SOI) substrate is presented. The accelerometer features quasi-digital output, therefore eliminating the need for analogue signal conditioning. The accelerometer can be directly interfaced to digital...

DRIE and Bonding Assisted Low Cost MEMS Processing of In-plane HAR Inertial Sensors

We present a simple, flexible and low cost MEMS fabrication process, developed using deep reactive ion etching (DRIE) and wafer bonding technologies, for manufacturing in-plane high aspect ratio (HAR) inertial sensors. Among examples, the design and fabrication results of a two axis inertial device are presented. Fabricated device thickness...

Simple optical characterisation for biomimetic micromachined silicon strain-sensing structure

This paper presents an on-going work to develop micromachined silicon-based strain sensor inspired from the campaniform sensillum of insects. We present simple optical setup for the characterisation of a membrane-in-recess structure as an early stage in mimicking the natural sensor. The microstructure is a 500 nm-thick SiO2/SiN circular membrane...