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Li, Yige (author)Optical sensor has been widely used in daily life. One of the important applications of optical sensors is the ambient light sensor installed in portable devices. The screen brightness of portable devices like smartphones is designed to be automatically adjusted based on the ambient environment. The ambient light detection is realized using...master thesis 2022
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Barantiev, Dimitar (author)There is a growing need for touch-free interaction with public utilities such as coffeemakers and vending machines that will help prevent the spread of diseases such as COVID-19. One solution is the integration of embedded gesture recognition systems relying on ambient light. However, existing work so far is found to be inefficient in terms of...bachelor thesis 2022
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van de Water, Stijn (author)This paper describes the design of an adaptable, low-cost, and energy efficient gesture detection system. The system leverages the ambient light available in the environment to perform Visible Light Sensing (VLS) using powerful Convolutional Neural Networks. The focus lies on designing a system that is capable of robust gesture detection in any...bachelor thesis 2022
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Akadiri, Femi (author)Public technology has been shown to have a strong dependence on physical touch, which increases the transmission of diseases. Gesture recognition helps to reduce this transmission, as the dependence on physical touch is removed. Furthermore, the use of visible light for gesture recognition would reduce the power consumption of public technology,...bachelor thesis 2022
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Theuwissen, A.J.P.A.M. (author)This article focuses on the angular dependency of the light sensitivity of a commercially available CMOS camera with a global shutter (storage node (SG) in the charge domain) and shared pixel architecture. The angular dependency is characterized as a function of both the wavelength and the angle of incidence of the incoming light. The...journal article 2022
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Theuwissen, A.J.P.A.M. (author)This article focuses on the parasitic light sensitivity (PLS) of a commercially available CMOS camera with a global shutter (with a storage node in the charge domain) and shared pixel architecture. The PLS is characterized as a function of both the wavelength and the incident angle of the incoming light. The measurement results are linked to...journal article 2022
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Sberna, P.M. (author), Fang, Piet Xiaowen (author), Fang, C. (author), Nihtianova, S. (author)The discovery of the extremely shallow amorphous boron-crystalline silicon heterojunction occurred during the development of highly sensitive, hard and robust detectors for low-penetration-depth ionizing radiation, such as ultraviolet photons and low-energy electrons (below 1 keV). For many years it was believed that the junction created by...review 2021
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Adriaanse, Michiel (author)A new photoplethysmography-based device called the Multiphotodiode Array (MPA) was validated to successfully measure the PWV in the vasculature of the distal phalanx of healthy subjects. It comprises an array of photodiodes and an array of opposing LEDs to detect blood volume changes due to the passing pressure pulse wave in the vasculature of...master thesis 2019
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Lee, M.J. (author), Ronchini Ximenes, A. (author), Padmanabhan, P. (author), Wang, Tzu Jui (author), Huang, Kuo Chin (author), Yamashita, Yuichiro (author), Yaung, Dun Nian (author), Charbon-Iwasaki-Charbon, E. (author)We present a high-performance back-illuminated three-dimensional stacked single-photon avalanche diode (SPAD), which is implemented in 45-nm CMOS technology for the first time. The SPAD is based on a P<sup>+</sup>/Deep N-well junction with a circular shape, for which N-well is intentionally excluded to achieve a wide depletion region, thus...journal article 2018
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Padmanabhan, P. (author), Hancock, Bruce (author), Nikzad, Shouleh (author), Bell, L. Douglas (author), Kroep, Kees (author), Charbon-Iwasaki-Charbon, E. (author)Gallium nitride (GaN) and its alloys are becoming preferred materials for ultraviolet (UV) detectors due to their wide bandgap and tailorable out-of-band cutoff from 3.4 eV to 6.2 eV. GaN based avalanche photodiodes (APDs) are particularly suitable for their high photon sensitivity and quantum efficiency in the UV region and for their...journal article 2018
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Wang, Weizheng (author), Zhang, Junwei (author), Wang, Q. (author), Zuniga, Marco (author)Localization based on visible light is gaining significant attention. But most existing studies rely on a key requirement: the object of interest needs to carry an optical receiver (camera or photodiode). We remove this requirement and investigate the possibility of achieving accurate localization in a passive manner, that is, without...conference paper 2018
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Valladolid Calderon, Miguel (author)Solar energy is the most promising source for electricity generation, the photovoltaic installed capacity has grown exponentially in the last years. The scale of these systems can be from households to energy plants, all systems have in common the need of a monitoring system that can determine if the system is performing correctly or it needs...master thesis 2017
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- Koladouz Esfahani, Z. (author) doctoral thesis 2017
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Perez Rodriguez, P. (author), Digdaya, I.A. (author), Mangel Raventos, A. (author), Falkenberg, M. (author), Vasudevan, R.A. (author), Zeman, M. (author), Smith, W.A. (author), Smets, A.H.M. (author)One of the main problems of renewable energies is storage of the energy carrier. For long-term storage, solar fuels seem to be a good option. Direct solar water splitting could play an important role in the production of these solar fuels. One of the main challenges of this process is the charge separation and collection at the interfaces. The...conference paper 2016
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Qi, L. (author)In this thesis, the research on silicon-based CMOS-compatible PureB technology was continued with the goal of enabling a PureB process module that could be added as a back-end module to wafers from a CMOS foundry. The properties of PureB layers deposited at low-temperature, particularly those deposited at 400°C were studied in more detail, among...doctoral thesis 2016
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Mohammadi, V. (author), Nihtianov, S. (author)In this chapter, a new technology for low‐temperature (LT, 400°C) boron deposition is developed, which provides a smooth, uniform, closed LT boron layer. This technology is successfully employed to create near‐ideal LT PureB (pure boron) diodes with low, deep junction‐like saturation currents, allowing full integration of LT PureB photodiodes...book chapter 2016
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Sammak, A. (author), Aminian, Mahdi (author), Nanver, L.K. (author), Charbon-Iwasaki-Charbon, E. (author)Pure gallium and pure boron (PureGaB) Ge-on-Si photodiodes were fabricated in a CMOS compatible process and operated in linear and avalanche mode. Three different pixel geometries with very different area-to-perimeter ratios were investigated in linear arrays of 300 pixels with each a size of 26 × 26 μm2. The processing of anode contacts at the...journal article 2016
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Sammak, A. (author), Qi, L. (author), Nanver, L.K. (author)The effectiveness of using nanometer-thin boron (PureB) layers as interdiffusion barrier to aluminum (Al) is studied for a contacting scheme specifically developed for fabricating germanium-on-silicon (Ge-on-Si) p+n photodiodes with an oxide-covered light entrance window. Contacting is achieved at the perimeter of the Ge-island anode directly to...journal article 2015
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Lee, M.J. (author), Sun, P. (author), Charbon, E. (author)We report on the characterization of single-photon avalanche diodes (SPADs) fabricated in standard 140-nm silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. As a methodology for SPAD optimization, a test structure array, called SPAD farm, was realized with several junctions, guard-ring structures, dimensions,...conference paper 2015
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Lee, M.J. (author), Sun, P. (author), Charbon, E. (author)This paper reports on the first implementation of a single-photon avalanche diode (SPAD) in standard silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. The SPAD is realized in a circular shape, and it is based on a P+/N-well junction along with a P-well guard-ring structure formed by lateral diffusion of two...journal article 2015