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Sakic, A. (author), Scholtes, T.L.M. (author), De Boer, W.B. (author), Golshani, N. (author), Derakhshandeh, J. (author), Nanver, L.K. (author)
An arsenic doping technique for depositing up to 40-?m-thick high-resistivity layers is presented for fabricating diodes with low RC constants that can be integrated in closely-packed configurations. The doping of the as-grown epi-layers is controlled down to 5 × 1011 cm?3, a value that is solely limited by the cleanness of the epitaxial reactor...
journal article 2011