Implantation-based passivating contacts for crystalline silicon front/rear contacted solar cells

In this work, we develop SiO_x/poly-Si carrier-selective contacts grown by low-pressure chemical vapor deposition and boron or phosphorus doped by ion implantation. We investigate their passivation properties on symmetric structures while varying the thickness of poly-Si in a wide range (20-250 nm). Dose and energy of implantation...

Front and rear contact Si solar cells combining high and low thermal budget Si passivating contacts

In this work we develop a rear emitter silicon solar cell integrating carrier-selective passivating contacts (CSPCs) with different thermal budget in the same device. The solar cell consists of a B-doped poly-Si/SiO_x hole collector and an i/n hydrogenated amorphous silicon (a-Si:H) stack acting as electron collector placed on the...

Numerical Simulations of IBC Solar Cells Based on Poly-Si Carrier-Selective Passivating Contacts

This paper presents an analysis of physical mechanisms related to operation and optimization of interdigitated back contact (IBC) poly-silicon-based devices. Concepts of carrier selectivity and tunneling are used to identify the parameters that impact on the fill factor. Then, based on technology computer-aided design (TCAD) numerical...

High-efficiency black IBC c-Si solar cells with poly-Si as carrier-selective passivating contacts

In this work, we present the application of poly-Si carrier-selective passivating contacts (CSPCs) as both polarities in interdigitated back-contacted (IBC) solar cell architectures. We compared two approaches to form a gap between the back-surface field (BSF) and emitter fingers. It is proved that the gaps prepared by both approaches are...

IBC c-Si solar cells based on ion-implanted poly-silicon passivating contacts

Ion-implanted poly-crystalline silicon (poly-Si), in combination with a tunnel oxide layer, is investigated as a carrier-selective passivating contact in c-Si solar cells based on an interdigitated back contact (IBC) architecture. The optimized poly-Si passivating contacts enable low interface recombination, resulting in implied VOC (iVOC) of...