A Highly Linear Temperature Sensor Operating up to 600°C in a 4H-SiC CMOS Technology

In this work, a highly linear temperature sensor based on a silicon carbide (SiC) p-n diode is presented. Under a constant current biasing, the diode has an excellent linear response to the temperature (from room temperature to 600°C). The best linearity (coefficient of determination ${R}^{{2}}$ = 99.98%) is achieved when the current density...

Case Study of a Global Shutter CIS--Part 2: Parasitic Light Sensitivity

This article focuses on the parasitic light sensitivity (PLS) of a commercially available CMOS camera with a global shutter (with a storage node in the charge domain) and shared pixel architecture. The PLS is characterized as a function of both the wavelength and the incident angle of the incoming light. The measurement results are linked to...

A Wheatstone Bridge Temperature Sensor with a Resolution FoM of 20fJ.K ²

Temperature sensors intended for embedded applications should be both energy-and area-efficient. The combination of Wheatstone-bridge (WhB) sensors and continuous-time ADCs has proven to be highly energy efficient [1], [2]. However, their area (> 0.25 mm{2}) is still larger than that of comparable BJT-based sensors [3], [4]. This paper...

A CMOS Temperature Sensor with a 49fJ·K2 Resolution FoM

This paper presents the most energy-efficient CMOS temperature sensor ever reported, with a resolution FoM of 49fJ·K2, 2.7× better than the state-of-the-art. It consists of a Wheatstone bridge made from poly-silicon resistors, which is readout by a 2nd-order Continuous-Time Delta-Sigma modulator (CTDSM). This approach leads to a high resolution ...