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Kulkarni, Mahesh (author)Power Electronics in association with the high voltage technology has the potential to bring out new generation of electrification with well-integrated renewable resources. Various high voltage applications of power electronics include Solid State Transformers (SST), Photovoltaic Inverters (PV), and Shore-to-ship connections. A demand for faster...master thesis 2023
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Chen, Wei (author), Jiang, Jing (author), Meda, Abdulmelik H. (author), Ibrahim, Mesfin S. (author), Zhang, Kouchi (author), Fan, J. (author)SiC MOSFET is mainly characterized by the higher electric breakdown field, higher thermal conductivity, and lower switching loss enabling high breakdown voltage, high-temperature operation, and high switching frequency. However, their performances are considerably limited by the high parasitic inductance and poor heat dissipation capabilities...journal article 2023
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Plasma-sprayed Al2O3-TiB2-SiC ternary composite coatings and its wear behaviour based on SiC contentMirhosseini, Seyed Hossein (author), Mosallaee, Masoud (author), Razavi, Mansour (author), Fotouhi, M. (author)This paper aims to study the effect of adding different SiC content on the wear performance of Al<sub>2</sub>O<sub>3</sub>-TiB<sub>2</sub>-SiC ternary composite coatings produced by the air plasma spraying process. The study used SHS powders as primary materials, consisting of H<sub>3</sub>BO<sub>3</sub>, Al, and TiO<sub>2</sub>, and 5, 10,...journal article 2023
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Wu, Huan (author), Luo, Houcai (author), Zhang, Jingping (author), Zheng, Bofeng (author), Lang, Lei (author), Wang, Zeping (author), Zhang, Kouchi (author), Chen, Xianping (author)To investigate the unclamped inductive switch (UIS) characteristics, 1200 V silicon carbide (SiC) planar MOSFETs with four cell topologies of linear, current sharing linear, square, and hexagon are designed and manufactured. The experimental platform was built and tested. The results show that the single pulse avalanche energy density of the...journal article 2023
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Romijn, J. (author), Vollebregt, S. (author), de Bie, Vincent G. (author), Middelburg, L.M. (author), el Mansouri, B. (author), van Zeijl, H.W. (author), May, Alexander (author), Erlbacher, Tobias (author), Leijtens, J.A.P. (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author)The next generation of satellites will need to tackle tomorrow's challenges for communication, navigation and observation. In order to do so, it is expected that the amount of satellites in orbit will keep increasing, form smart constellations and miniaturize individual satellites to make access to space cost effective. To enable this next...journal article 2023
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Mo, J. (author), Shankar, S. (author), Zhang, Kouchi (author), Vollebregt, S. (author)Fabricating high-aspect-ratio (HAR) structures with silicon carbide (SiC) is a challenging task. This paper presents a silicon carbide (SiC) reinforced vertically aligned carbon nanotubes (VACNT) composite as a promising candidate to fabricate HAR MEMS devices for harsh environment applications. The use of a VACNT array allows the fast...conference paper 2023
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Chen, Wei (author), Yan, Xuyang (author), Ibrahim, Mesfin S. (author), Meda, Abdulmelik H. (author), Fan, X. (author), Zhang, Kouchi (author), Fan, J. (author)As the next generation of semiconductor devices, SiC MOSFETs have demonstrated significant performance improvements in switching loss, switching frequency, and high-temperature operation compared to Si-based MOSFETs. However, the long-term reliability of such devices and their packaging continues to be a major concern. Towards addressing this...conference paper 2023
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- Romijn, J. (author) doctoral thesis 2022
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Zhang, Luqianxue (author)Trials of surface modifications using low pressure chemical vapor deposition (LPCVD) has successfully decreased the high temperature needed for the fabrication of SiC membrane from 2000°C to below 900 °C. With this great success on the reduction of the energy con-sumption, however, further studies on the chemical stability and the fouling...master thesis 2022
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Rietveld, Jasper (author)Capacitive, interdigital sensors in proximity of a PASiC thin film have been proposed as a cheap, robust alternative to existing ammonia sensing technologies. However, although prototype sensors have been manufactured, investigation into the working principles of this class of ammonia sensors is limited. This work aims to analyse the electrode...master thesis 2022
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CHEN, Zhelun (author)With the high-speed development of the Internet of Things (IoT), powering such a massive number of wireless IoT sensors with chemical batteries become more and more unpractical. To make the IoT sensors self-sustained, Piezoelectric Energy Harvesting (PEH) technology provides an excellent solution to power the devices with a relatively long...master thesis 2022
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Romijn, J. (author), Vollebregt, S. (author), Middelburg, L.M. (author), el Mansouri, B. (author), van Zeijl, H.W. (author), May, Alexander (author), Erlbacher, Tobias (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author)The wide bandgap of silicon carbide (SiC) has attracted a large interest over the past years in many research fields, such as power electronics, high operation temperature circuits, harsh environmental sensing, and more. To facilitate research on complex integrated SiC circuits, ensure reproducibility, and cut down cost, the availability of a...journal article 2022
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Stecca, M. (author), Tan, Changyu (author), Xu, J. (author), Soeiro, Thiago B. (author), Bauer, P. (author), Palensky, P. (author)In this article, a hybrid Si/Si carbide (SiC) switch (HyS) modulation with minimum SiC MOSFET conduction (mcHyS) is experimentally characterized, so as to derive its conduction and switching performance. These are later used to derive a silicon (Si) area analytical model for the HyS configuration. The chip area model is used to benchmark the...journal article 2022
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Romijn, J. (author), Vollebregt, S. (author), May, Alexander (author), Erlbacher, Tobias (author), van Zeijl, H.W. (author), Leijtens, J.A.P. (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author)In this paper, we present a quadrant sun position sensor microsystem device in a silicon carbide technology that operates in a field-of-view of ±33° and reaches a mean error of 1.9° in this range. This will allow, for the first time, an inherently visible blind sun position sensor in a CMOS compatible technology. Opto-electronic integration of...conference paper 2022
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Yu, G. (author), Soeiro, Thiago B. (author), Dong, J. (author), Bauer, P. (author)This paper presents the semiconductor losses analytical equations in closed form for two-level voltage source converter, three-level neutral point clamped (NPC) and three-level T-Type PFC topologies in high power applications. The reverse parallel current conduction between the SiC MOSFETs channel and body diode is considered. A circuit...conference paper 2022
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Ganeshpure, D.A. (author), Soundararajan, Ajeeth Phrassanna (author), Soeiro, Thiago B. (author), Ghaffarian Niasar, M. (author), Vaessen, P.T.M. (author), Bauer, P. (author)This article compares the pulse current capability of various Semiconductor (SM) device technologies for Modular Multilevel Converter (MMC)-based High Voltage (HV) Arbitrary Waveform Generator (AWG) for dielectric testing of grid assets to find the most suitable SM device technology which can perform well in generating lightning impulse that...conference paper 2022
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Fan, Jiajie (author), Qian, Yichen (author), Chen, Wei (author), Jiang, Jing (author), Tang, Zhuorui (author), Fan, Xuejun (author), Zhang, Kouchi (author)A fan-out panel-level packaging (FOPLP) with an embedded redistribution layer (RDL) via interconnection reduces the size, thermal resistance, and parasitic inductance of power module packaging. In this study, the effect of the RDL via size on the reliability of a FOPLP SiC MOSFET power module was investigated. To improve the thermal management...conference paper 2022
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Jia, Jinhao (author), Li, Cong (author), Chen, Qiang (author), Bai, Shuxin (author), Chang, J. (author), Xiong, Degan (author), Gao, Mingqi (author), Li, Shun (author), Xiao, Jin (author)3D C<sub>f</sub>/SiC–Al composites were achieved through the pressure infiltration of liquid Al–Si alloy into porous 3D C<sub>f</sub>/SiC preform, which was produced by different cycles of precursor infiltration and pyrolysis. The effect of silicon carbide volume fraction on the microstructure, anisotropic mechanical response, and...journal article 2022
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Oude Aarninkhof, Bram (author)The worldwide adoption of Electric Vehicles (EV) has gained momentum in recent years, with more than 30% of all EVs being sold last year. Additionally, a new trend of 800 V battery architectures has appeared to allow for faster charging than the now common 400 V architectures. Future proof charging topologies should, therefore, be able to...master thesis 2021
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Romijn, J. (author), Middelburg, L.M. (author), Vollebregt, S. (author), el Mansouri, B. (author), van Zeijl, H.W. (author), May, Alexander (author), Erlbacher, Tobias (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author)Accurately sensing the temperature in silicon carbide (power) devices is of great importance to their reliable operation. Here, temperature sensors by resistive and CMOS structures are fabricated and characterized in an open silicon carbide CMOS technology. Over a range of 25-200°C, doped design layers have negative temperature coefficients of...conference paper 2021