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Xin, Yu (author), Pandraud, G. (author), French, P.J. (author)In this Letter, a slope transfer method to fabricate vertical waveguide couplers is proposed. This method utilises wet etched Si as a mask, and takes advantage of dry etching selectivity between Si and SiC, to successfully transfer the profile from the Si master into SiC. By adopting this method, a <2° slope is achieved. Such a taper can...journal article 2019
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Ten Kate, O.M. (author), De Jong, M. (author), Hintzen, H.T. (author), Van der Kolk, E. (author)Solar cells of which the efficiency is not limited by the Shockley-Queisser limit can be obtained by integrating a luminescent spectral conversion layer into the cell structure. We have calculated the maximum efficiency of state-of-the-art c-Si, pc-Si, a-Si, CdTe, GaAs, CIS, CIGS, CGS, GaSb, and Ge solar cells with and without an integrated...journal article 2013
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Endo, A. (author), Sfiligoj, C. (author), Yates, S.J.C. (author), Baselmans, J.J.A. (author), Thoen, D.J. (author), Javadzadeh, S.M.H. (author), Van der Werf, P.P. (author), Baryshev, A.M. (author), Klapwijk, T.M. (author)We experimentally demonstrate the principle of an on-chip submillimeter wave filter bank spectrometer, using superconducting microresonators as narrow band-separation filters. The filters are made of NbTiN/SiNx/NbTiN microstrip line resonators, which have a resonance frequency in the range of 614-685?GHz, two orders of magnitude higher in...journal article 2013
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Zhu, S.E. (author), Ghatkesar, M.K. (author), Zhang, C. (author), Janssen, G.C.A.M. (author)We present a pressure sensor based on the piezoresistive effect of graphene. The sensor is a 100?nm thick, 280??m wide square silicon nitride membrane with graphene meander patterns located on the maximum strain area. The multilayer, polycrystalline graphene was obtained by chemical vapor deposition. Strain in graphene was generated by applying...journal article 2013
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Zeng, Z. (author), Pertijs, M.A.P. (author), Karabacak, D.M. (author)This paper presents an energy-efficient readout circuit for resonant sensors that operates based on a transient measurement method. The resonant sensor is driven at a frequency close to its resonance frequency by an excitation source that can be intermittently disconnected, causing the sensor to oscillate at its resonance frequency with...journal article 2013
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Diedenhofen, S.L. (author), Algra, R.E. (author), Bakkers, E.P.A.M. (author), Gómez Rivas, J. (author)The propagation of light in layers of vertically aligned nanowires is determined by their unique and extreme optical properties. Depending on the nanowire filling fraction and their diameter, layers of nanowires form strongly birefringent media. This large birefringence gives rise to sharp angle dependent peaks in polarized reflection. We...journal article 2011
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Post, P.C. (author), Mohammadi-Gheidari, A. (author), Hagen, C.W. (author), Kruit, P. (author)Lithography techniques based on electron-beam-induced processes are inherently slow compared to light lithography techniques. The authors demonstrate here that the throughput can be enhanced by a factor of 196 by using a scanning electron microscope equipped with a multibeam electron source. Using electron-beam induced deposition with MeCpPtMe3...journal article 2011
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De Boer, W.D.A.M. (author), Trinh, M.T. (author), Timmerman, D. (author), Schins, J.M. (author), Siebbeles, L.D.A. (author), Greogorkiewicz, T. (author)We report on investigations of optical generation of carriers in Si nanocrystals embedded in SiO2 matrix by time-resolved induced absorption technique. Results obtained for excitation below and above twice the bandgap energy h??<?2Eg and h??>?2Eg show very similar decay characteristics (within ?resolution ? 100 fs). When intensity of the signal...journal article 2011
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Chen, T. (author), Ishihara, R. (author), Beenakker, K. (author)In this article, we investigated the high quality SiO2 deposited at 80°C by inductively coupled plasma enhanced chemical vapor deposition (CVD). The interface trap density of 1.48×1010 cm?2 eV?1 and breakdown voltage of 5.6 MV/cm were realized successfully despite the low deposition temperature. Thin film transistors (TFTs) have been fabricated...journal article 2010
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Babaei Gavan, K. (author), Westra, H.J.R. (author), Van der Drift, E.W.J.M. (author), Venstra, W.J. (author), Van der Zant, H.S.J. (author)The effective Young’s modulus of silicon nitride cantilevers is determined for thicknesses in the range of 20–684 nm by measuring resonance frequencies from thermal noise spectra. A significant deviation from the bulk value is observed for cantilevers thinner than 150 nm. To explain the observations we have compared the thickness dependence of...journal article 2009
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Krc, J. (author), Zeman, M. (author), Luxembourg, S.L. (author), Topic, M. (author)A concept of a modulated one-dimensional photonic-crystal (PC) structure is introduced as a back reflector for thin-film solar cells. The structure comprises two PC parts, each consisting of layers of different thicknesses. Using layers of amorphous silicon and amorphous silicon nitride a reflectance close to 100% is achieved over a broad...journal article 2009
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Barends, R. (author), Hortensius, H.L. (author), Zijlstra, T. (author), Baselmans, J.J.A. (author), Yates, S.J.C. (author), Gao, J.R. (author), Klapwijk, T.M. (author)We study NbTiN resonators by measurements of the temperature dependent resonance frequency and frequency noise. Additionally, resonators are studied covered with SiOx dielectric layers of various thicknesses. The resonance frequency develops a nonmonotonic temperature dependence with increasing SiOx layer thickness. The increase in the noise is...journal article 2008
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Yuan, C.A. (author), Van der Sluis, O. (author), Zhang, G.Q. (author), Ernst, L.J. (author), Van Driel, W.D. (author), Flower, A.E. (author), Van Silfhout, B.R. (author)We propose an amorphous/porous molecular connection network generation algorithm for simulating the material stiffness of a low-k material (SiOC:H). Based on a given concentration of the basic building blocks, this algorithm will generate an approximate and large amorphous network. The molecular topology is obtained by distributing these blocks...journal article 2008
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Castelijns, H.J. (author), Huinink, H.P. (author), Pel, L. (author), Zitha, P.L.J. (author)The coupled mass transfer and chemical reactions of a gel-forming compound in a two-phase system were studied in detail. Tetra-methyl-ortho-silicate (TMOS) is often used as a precursor in sol-gel chemistry to produce silica gels in aqueous systems. TMOS can also be mixed with many hydrocarbons without chemical reaction, which allows for various...journal article 2006
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Pham, H.T.M. (author), De Boer, C.R. (author), Visser, C.C.G. (author), Sarro, P.M. (author)In this paper, we present a systematic investigation of the influence of the deposition parameters on the deposition rate, etch rate, and mechanical stress of SiC films prepared by plasma-enhanced chemical vapor deposition (PECVD) technique. Among the relevant deposition parameters, the SiH4 gas flow rate, the main parameter to determine the Si...journal article 2005
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Wu, M.Y. (author), Krapf, D. (author), Zandbergen, M. (author), Zandbergen, H. (author), Batson, P.E. (author)An electron beam can drill nanopores in SiO2 or silicon nitride membranes and shrink a pore to a smaller diameter. Such nanopores are promising for single molecule detection. The pore formation in a 40?nm thick silicon nitride?SiO2 bilayer using an electron beam with a diameter of 8?nm (full width of half height) was investigated by electron...journal article 2005
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Storm, A.J. (author), Chen, J.H. (author), Ling, X.S. (author), Zandbergen, H.W. (author), Dekker, C. (author)The imaging beam of a transmission electron microscope can be used to fine tune critical dimensions in silicon oxide nanostructures. This technique is particularly useful for the fabrication of nanopores with single-nanometer precision, down to 2 nm. We report a detailed study on the effect of electron-beam irradiation on apertures with various...journal article 2005
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Dorenbos, P. (author)A mechanism of persistent luminescence that was proposed in 1996 for SrAl2O4:Eu2+;Dy3+ has been widely adopted to explain afterglow in many Eu2+ and Dy3+ codoped aluminates and silicates. The mechanism involves the thermally activated release of a hole from Eu2+ in its excited 5d state to the valence band which is subsequently trapped by Dy3+....journal article 2005
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Bromley, S.T. (author), Flikkema, E. (author)The prominent (SiO2)8O2H3? mass peak resulting from the laser ablation of hydroxylated silica, attributed to magic cluster formation, is investigated employing global optimization with a dedicated interatomic potential and density functional calculations. The low-energy spectra of cluster isomers are calculated for the closed shell clusters: ...journal article 2005
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Stassen, A.F. (author), De Boer, R.W.I. (author), Iosad, N.N. (author), Morpurgo, A.F. (author)We have performed a comparative study of rubrene single-crystal field-effect transistors fabricated using different materials as gate insulator. For all materials, highly reproducible device characteristics are obtained. The achieved reproducibility permits one to observe that the mobility of the charge carriers systematically decreases with...journal article 2004
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