Searched for: subject%3A%22Silicon%22
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Mescher, M. (author), Brinkman, A.G.M. (author), Bosma, D. (author), Klootwijk, J.H. (author), Sudhölter, E.J.R. (author), De Smet, L.C.P.M. (author)
In this study, we report on the electrical response of top-down, p-type silicon nanowire field-effect transistors exposed to water and mixtures of water and dioxane. First, the capacitive coupling of the back gate and the liquid gate via an Ag/AgCl electrode were compared in water. It was found that for liquid gating smaller potentials are...
journal article 2014
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Cao, A. (author), Sudhölter, E.J.R. (author), De Smet, L.C.P.M. (author)
Since their introduction in 2001, SiNW-based sensor devices have attracted considerable interest as a general platform for ultra-sensitive, electrical detection of biological and chemical species. Most studies focus on detecting, sensing and monitoring analytes in aqueous solution, but the number of studies on sensing gases and vapors using SiNW...
journal article 2013
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Vons, V.A. (author), De Smet, L.C.P.M. (author), Munao, D. (author), Evirgen, A. (author), Kelder, E.M. (author), Schmidt-Ott, A. (author)
On the example of silicon, the production of nanoparticles using spark discharge is shown to be feasible for semiconductors. The discharge circuit is modelled as a damped oscillator circuit. This analysis reveals that the electrode resistance should be kept low enough to limit energy loss by Joule heating and to enable effective nanoparticle...
journal article 2011