Searched for: subject%3A%22Silicon%255C%252Bcarbide%22
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Chen, Wei (author), Jiang, Jing (author), Meda, Abdulmelik H. (author), Ibrahim, Mesfin S. (author), Zhang, Kouchi (author), Fan, J. (author)
SiC MOSFET is mainly characterized by the higher electric breakdown field, higher thermal conductivity, and lower switching loss enabling high breakdown voltage, high-temperature operation, and high switching frequency. However, their performances are considerably limited by the high parasitic inductance and poor heat dissipation capabilities...
journal article 2023
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Qian, Yichen (author), Hou, F. (author), Fan, J. (author), Lv, Quanya (author), Fan, X. (author), Zhang, Kouchi (author)
A new panel-level silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) power module was developed by using the fan-out and embedded chip technologies. To achieve the more effective thermal management and higher reliability under thermal cycling, a new optimization method called Ant colony optimization-back...
journal article 2021
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Poelma, R.H. (author), Morana, B. (author), Vollebregt, S. (author), Schlangen, H.E.J.G. (author), Van Zeijl, H.W. (author), Fan, X. (author), Zhang, G.Q. (author)
The porous nature of carbon nanotube (CNT) arrays allows for the unique opportunity to tailor their mechanical response by the infiltration and deposition of nanoscale conformal coatings. Here, we fabricate novel photo-lithographically defined CNT pillars that are conformally coated with amorphous silicon carbide (a-SiC) to strengthen the...
journal article 2014