Searched for: subject%3A%22Silicon%255C%2Bcarbide%22
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Liu, X. (author)
doctoral thesis 2023
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Sun, B. (author), Mo, J. (author), Zhang, Hemin (author), van Zeijl, H.W. (author), van Driel, W.D. (author), Zhang, Kouchi (author)
The thermal-piezoresistive effect in silicon (Si) has attracted great attention toward high-performance resonant devices but still faces major challenges for harsh environment applications. Instead of using Si, this paper, for the first time, reports a thermal-piezoresistive resonator based on a silicon carbide-on-insulator (SiCOI) platform. The...
conference paper 2023
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Wu, Huan (author), Luo, Houcai (author), Zhang, Jingping (author), Zheng, Bofeng (author), Lang, Lei (author), Wang, Zeping (author), Zhang, Kouchi (author), Chen, Xianping (author)
To investigate the unclamped inductive switch (UIS) characteristics, 1200 V silicon carbide (SiC) planar MOSFETs with four cell topologies of linear, current sharing linear, square, and hexagon are designed and manufactured. The experimental platform was built and tested. The results show that the single pulse avalanche energy density of the...
journal article 2023
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Romijn, J. (author)
doctoral thesis 2022
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Salden, Tom (author)
Sensors are extremely valuable to this world. Without sensors, we would not be able to live as we do in this data-driven environment. Therefore, finding new ways to measure the matter around us is a continuous process. In this work, an addition to the new sensors is attempted, using materials that can withstand the most extreme circumstances....
master thesis 2022
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Yuan, Michaël (author)
Wide band gap semiconductor has attracted significant industrial interest over the past decade with its superior properties: such as high critical electrical field, high thermal conductivity andwide band gap. Meanwhile many industries operating in harsh environments have long had demands for sensing solutions that function at high temperature....
master thesis 2022
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LI, JINGLIN (author)
To extend Moore’s law, silicon carbide devices attend the researcher’s attention due to their irreplaceable advantages such as high critical breakdown electrical field, wide bandgap and excellent thermal conductivity without sacrificing too much charge carrier mobility. However, the defects on the SiC-oxide interface degrades the performance of...
master thesis 2022
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Marting, Louis (author)
Terahertz astronomy has been exceptionally unexplored until the last decades due to a technological gap, but exactly at these wavelengths the most distant galaxies appear very bright. Efficient instruments that are capable of spectrometry are essential in understanding the physics of these distant objects. Within the framework of this thesis, an...
master thesis 2022
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Böcher, Catrin (author)
Transitioning of energy intensive industries (EIIs) towards more sustainability forms an important building block in achieving the Paris climate goals. Silicon carbide (SiC) production is such an EII, though it has not yet received much attention in systemic research. This thesis attempts to fill this gap by studying how SiC flows through the...
master thesis 2022
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Yu, G. (author), Soeiro, Thiago B. (author), Dong, J. (author), Bauer, P. (author)
This paper presents the semiconductor losses analytical equations in closed form for two-level voltage source converter, three-level neutral point clamped (NPC) and three-level T-Type PFC topologies in high power applications. The reverse parallel current conduction between the SiC MOSFETs channel and body diode is considered. A circuit...
conference paper 2022
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Romijn, J. (author), Vollebregt, S. (author), Middelburg, L.M. (author), el Mansouri, B. (author), van Zeijl, H.W. (author), May, Alexander (author), Erlbacher, Tobias (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author)
The wide bandgap of silicon carbide (SiC) has attracted a large interest over the past years in many research fields, such as power electronics, high operation temperature circuits, harsh environmental sensing, and more. To facilitate research on complex integrated SiC circuits, ensure reproducibility, and cut down cost, the availability of a...
journal article 2022
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Romijn, J. (author), Vollebregt, S. (author), May, Alexander (author), Erlbacher, Tobias (author), van Zeijl, H.W. (author), Leijtens, J.A.P. (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author)
In this paper, we present a quadrant sun position sensor microsystem device in a silicon carbide technology that operates in a field-of-view of ±33° and reaches a mean error of 1.9° in this range. This will allow, for the first time, an inherently visible blind sun position sensor in a CMOS compatible technology. Opto-electronic integration of...
conference paper 2022
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Chen, M. (author), Heijman, Sebastiaan (author), Luiten-Olieman, Mieke W.J. (author), Rietveld, L.C. (author)
Ceramic membranes have drawn increasing attention in oily wastewater treatment as an alternative to their traditional polymeric counterparts, yet persistent membrane fouling is still one of the largest challenges. Particularly, little is known about ceramic membrane fouling by oil-in-water (O/W) emulsions in constant flux filtration modes. In...
journal article 2022
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Doust Mohammadi, Mohsen (author), Abdullah, Hewa Y. (author), Bhowmick, Somnath (author), Biskos, G. (author)
The ability of carbon- and silicon-based nanotubes, including pure carbon, silicon carbide, and Ge-doped silicon carbide nanotubes (CNT, SiCNT, SiCGeNT, respectively), for sensing highly toxic dichlorosilane (H2SiCl2) are investigated using quantum chemistry calculations. The intermolecular interactions between the sensing material and the gas...
journal article 2022
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Yu, G. (author), Dong, J. (author), Soeiro, Thiago B. (author), Zhu, G. (author), Yao, Y. (author), Bauer, P. (author)
This article introduces a three-mode variable-frequency zero-voltage switching (ZVS) modulation method for the four-switch buck+boost converter. This method makes this circuit concept well suited for applications, such as wireless power charging of electric vehicles, where this circuit operates as a power buffer between the resonant converter...
journal article 2022
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Ammerlaan, Tim (author)
Lithium-ion batteries are currently most commonly used in most electronic devices. These batteries are used because of their superiority in gravimetric energy and cyclability compared to other battery technologies. The most common anode used in lithium-ion batteries is currently graphite. Graphite has proven to be a very stable cycling material....
master thesis 2021
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SHANKAR, SHREYAS (author)
Silicon-based MEMS technology has been the standard for developing 2D and 3D<br/>micro-structures for many years. There are 2 main classifications of MEMS manufacturing technologies, viz. bulk micro-machining, and surface micro-machining.<br/>These techniques have its own set of drawbacks. Bulk micro-machining affects the structural integrity of...
master thesis 2021
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Qin, Guangze (author)
Colloidal fouling has attracted increasing interest in the membrane field. Oil and water (O/W) emulsion droplet and Extracellular polymeric substance (EPS) are significant colloids in produced water and surface water, respectively. Oily wastewater is produced in many industrial processes such as oil and gas extraction processes, and can take a...
master thesis 2021
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Mathew, Philip (author)
The ambitious transition towards a renewable future is being made possible by power electronic systems that facilitate effective control and efficient conversion of energy. One such system is the solid-state transformer (SST) which aims to replace conventional transformers by offering larger energy densities and flexible...
master thesis 2021
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Romijn, J. (author), Middelburg, L.M. (author), Vollebregt, S. (author), el Mansouri, B. (author), van Zeijl, H.W. (author), May, Alexander (author), Erlbacher, Tobias (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author)
Accurately sensing the temperature in silicon carbide (power) devices is of great importance to their reliable operation. Here, temperature sensors by resistive and CMOS structures are fabricated and characterized in an open silicon carbide CMOS technology. Over a range of 25-200°C, doped design layers have negative temperature coefficients of...
conference paper 2021
Searched for: subject%3A%22Silicon%255C%2Bcarbide%22
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