Characterization and modeling of mismatch in Cryo-CMOS

This paper presents a device matching study of a commercial 40-nm bulk CMOS technology operated at cryogenic temperatures. Transistor pairs and linear arrays, optimized for device matching, were characterized over the temperature range from 300 K down to 4.2 K. The device parameters relevant for mismatch, i.e., the threshold voltage and the...

Compact Thermal-Diffusivity-Based Temperature Sensors in 40-nm CMOS for SoC Thermal Monitoring

An array of temperature sensors based on the thermal diffusivity (TD) of bulk silicon has been realized in a standard 40-nm CMOS process. In each TD sensor, a highly digital voltage-controlled oscillator-based Σ Δ ADC digitizes the temperature-dependent phase shift of an electrothermal filter (ETF). A phase calibration scheme is used to...

Mobility-based Time References for Wireless Sensor Networks

Wireless Sensor Networks require small low-cost radios to enable communication among its nodes. Since those radios must be fully integrated to reduce cost and size, integration is required also for their on-board time references, which are needed to achieve synchronization with the other nodes. To deal with the lower accuracy of integrated...