Online Condition Monitoring Methodology for Power Electronics Package Reliability Assessment

This article introduces an online condition monitoring strategy that utilizes a transient heat pulse to detect package thermal performance degradation. The metric employed is the temperature-dependent transient thermal impedance "Zth(t, Tamb)."The proposed methodology offers quantitative insights into package thermal performance degradation...

A Highly Linear Temperature Sensor Operating up to 600°C in a 4H-SiC CMOS Technology

In this work, a highly linear temperature sensor based on a silicon carbide (SiC) p-n diode is presented. Under a constant current biasing, the diode has an excellent linear response to the temperature (from room temperature to 600°C). The best linearity (coefficient of determination ${R}^{{2}}$ = 99.98%) is achieved when the current density...

Copper Nanoparticle Sintering Enabled Hermetic Packaging With Fine Sealing Ring for MEMS Application

Driving by the increased demand for hermetic packaging in the more than Moore (MtM) roadmap, a Cu nanoparticle sintering-enabled hermetic sealing solution was developed with a small-size sealing ring. The developed technology simplifies microfabrication and requires less surface roughness using a sinterable Cu nanoparticle paste. A 50μm size...

Temperature-sensing performance of polymer-derived SiAlCN ceramics up to 1000 °C

Temperature sensors that can operate in high-temperature and harsh environments are highly desired. However, this is a great challenge for sensing materials to operate under extreme working conditions because of oxidation and/or corrosion at high temperature. In this study, polymer-derived SiAlCN ceramics were prepared as sensing materials to...

Resistive and CTAT Temperature Sensors in a Silicon Carbide CMOS Technology

Accurately sensing the temperature in silicon carbide (power) devices is of great importance to their reliable operation. Here, temperature sensors by resistive and CMOS structures are fabricated and characterized in an open silicon carbide CMOS technology. Over a range of 25-200°C, doped design layers have negative temperature coefficients of...

In Situ  Failure Detection of Electronic Control Units Using Piezoresistive Stress Sensor

Recent advancements in automotive technologies, most notably autonomous driving, demand electronic systems much more complex than those realized in the past. The automotive industry has been forced to adopt advanced consumer electronics to satisfy the demand, and thus it becomes more challenging to assess system reliability while adopting the...

Single-Mask Fabrication of Temperature Triggered MEMS Switch for Cooling Control in SSL System

A micro-electro-mechanical-system (MEMS) based, temperature triggered, switch is developed as a cost-effective solution for smart cooling control of solid-state-lighting systems. The switch (1.0x0.4 mm2) is embedded in a silicon substrate and fabricated with a single-mask 3D micro-machining process. The device switches on at a designed...

Interface Electronics for a CMOS Electrothermal Frequency-Locked-Loop