The direct growth of carbon nanotubes as vertical interconnects in 3D integrated circuits

Carbon nanotubes (CNT) have been proposed for many applications in integrated circuits (IC): ranging from transistors and interconnects to sensors and actuators. For these applications it is crucial to integrate CNT directly alongside electronics, something which has not been achieved before. In this work we demonstrate the direct growth of CNT...

High aspect-ratio MEMS devices for the next generation of THz/MHz passive components

The realization of efficient passive devices directly on chip represents one of the most intriguing challenges in IC fabrication processes. The performance of such devices are intrinsically determined by physical parameters that cannot be easily scaled, making the on-chip integration of such components a complex task to solve. To pursue the...

Carbon Nanotubes as Vertical Interconnects in 3D Integrated Circuits

Interconnects in integrated circuits (IC) are the major cause of power dissipation and delay. 3D integration has been proposed as a method to reduce these issues. For this 3D integration, fabrication of high aspect ratio reliable vertical interconnects (vias) are required. For this new materials, like carbon nanotubes (CNT), are being considered...

Carbon nanotubes as vertical interconnects in 3D integrated circuits

In integrated circuits the delay caused by interconnects, their power consumption, production and reliability are challenges to be solved. Using the third dimension for additional layers of transistor has been proposed as a solution to this problem by reducing the length of the interconnects. A problem in 3D integration is the creation of...