Searched for: subject:"conductivity"
(1 - 4 of 4)
document
Kind, R. (author), Van Swaaij, R.A.C.M.M. (author), Rubinelli, F.A. (author), Solntsev, S. (author), Zeman, M. (author)
The performance of hydrogenated amorphous silicon (a-Si:H) p-i-n solar cells is limited, as they contain a relatively high concentration of defects. The dark current voltage (JV) characteristics at low forward voltages of these devices are dominated by recombination processes. The recombination rate depends on the concentration of active...
journal article 2011
document
Chen, P. (author), Salemink, H.W.M. (author), Alkemade, P.F.A. (author)
Ion-beam-induced deposition (IBID) is a powerful technique for prototyping three-dimensional nanostructures. To study its capability for this purpose, the authors investigate the proximity effect in IBID of nanopillars. In particular, the changes in shape and dimension of pillars are studied when a second pillar is grown near an existing pillar....
journal article 2009
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Sellier, H. (author), Lansbergen, G.P. (author), Caro, J. (author), Rogge, S. (author), Collaert, N. (author), Ferain, I. (author), Jurczak, M. (author), Biesemans, S. (author)
The authors investigate the subthreshold behavior of triple-gate silicon field-effect transistors by low-temperature transport experiments. These three-dimensional nanoscale devices consist of a lithographically defined silicon nanowire surrounded by a gate with an active region as small as a few tens of nanometers down to 50×60×35?nm3....
journal article 2007
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Klaver, A. (author), Nádaždy, V. (author), Zeman, M. (author), Swaaiij, R.A.C.M.M. (author)
We present a study of changes in the defect density of states in hydrogenated amorphous silicon (a-Si:H) due to high-energy electron irradiation using charged deep-level transient spectroscopy. It was found that defect states near the conduction band were removed, while in other band gap regions the defect-state density increased. A similar...
journal article 2006
Searched for: subject:"conductivity"
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