Searched for: subject:"conductivity"
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document
Dorenbos, P. (author), Van der Kolk, E. (author)
Knowledge from lanthanide spectroscopy on wide band gap (6–10?eV) inorganic compounds is used to understand and predict optical and electronic properties of the lanthanides in the III-V semiconductor GaN. For the first time the location of the 4fn ground state energy of each divalent and trivalent lanthanide ion relative to the valence and...
journal article 2006
document
Klaver, A. (author), Nádaždy, V. (author), Zeman, M. (author), Swaaiij, R.A.C.M.M. (author)
We present a study of changes in the defect density of states in hydrogenated amorphous silicon (a-Si:H) due to high-energy electron irradiation using charged deep-level transient spectroscopy. It was found that defect states near the conduction band were removed, while in other band gap regions the defect-state density increased. A similar...
journal article 2006
document
Nanu, M. (author), Boulch, F. (author), Schoonman, J. (author), Goossens, A. (author)
Deep-level transient spectroscopy (DLTS) has been used to measure the concentration and energy position of deep electronic states in CuInS2. Flat TiO2?CuInS2 heterojunctions as well as TiO2-CuInS2 nanocomposites have been investigated. Subband-gap electronic states in CuInS2 films are mostly due to antisite point defects and vacancies....
journal article 2005
document
Dorenbos, P. (author)
A mechanism of persistent luminescence that was proposed in 1996 for SrAl2O4:Eu2+;Dy3+ has been widely adopted to explain afterglow in many Eu2+ and Dy3+ codoped aluminates and silicates. The mechanism involves the thermally activated release of a hole from Eu2+ in its excited 5d state to the valence band which is subsequently trapped by Dy3+....
journal article 2005
Searched for: subject:"conductivity"
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