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Burri, S. (author), Maruyama, Y. (author), Michalet, X. (author), Regazzoni, F. (author), Bruschini, C. (author), Charbon, E. (author)We present the architecture and three applications of the largest resolution image sensor based on single-photon avalanche diodes (SPADs) published to date. The sensor, fabricated in a high-voltage CMOS process, has a resolution of 512 × 128 pixels and a pitch of 24 ?m. The fill-factor of 5% can be increased to 30% with the use of microlenses....journal article 2014
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A wide spectral range single-photon avalanche diode fabricated in an advanced 180 nm CMOS technologyMandai, S. (author), Fishburn, M.W. (author), Maruyama, Y. (author), Charbon, E. (author)We present a single-photon avalanche diode (SPAD) with a wide spectral range fabricated in an advanced 180 nm CMOS process. The realized SPAD achieves 20 % photon detection probability (PDP) for wavelengths ranging from 440 nm to 820 nm at an excess bias of 4V, with 30 % PDP at wavelengths from 520 nm to 720 nm. Dark count rates (DCR) are at...journal article 2012
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Blacksberg, J. (author), Maruyama, Y. (author), Charbon, E. (author), Rossman, G.R. (author)We incorporate newly developed solid-state detector technology into time-resolved laser Raman spectroscopy, demonstrating the ability to distinguish spectra from Raman and fluorescence processes. As a proof of concept, we show fluorescence rejection on highly fluorescent mineral samples willemite and spodumene using a 128 × 128 single-photon...journal article 2011